The combination of metal-assisted
chemical etching (MACE) with
colloidal lithography has emerged as a simple and cost-effective approach
to nanostructure silicon. It is especially efficient at synthesizing
Si micro- and nanowire arrays using a catalytic metal mesh, which
sinks into the silicon substrate during the etching process. The approach
provides a precise control over the array geometry, without requiring
expensive nanopatterning techniques. Although MACE is a high-throughput
solution-based approach, achieving large-scale homogeneity can be
challenging because of the instability of the metal catalyst when
the experimental parameters are not set appropriately. Such instabilities
can lead to metal film fracture, significantly damaging the substrate
and thus compromising the nanowire array quality. Here, we report
on the critical parameters that influence the stability of the metal
catalyst layer for achieving large-scale homogeneous MACE: etchant
composition, metal film thickness, adhesion layer thickness, nanowire
diameter and pitch, metal film coverage, Si/Au/etchant interface length,
and crystalline quality of the colloidal template (grain size and
defects). Our results investigate the origin of the catalyst film
fracture and reveal that MACE experiments should be optimized for
each Si wire array geometry by keeping the etch rate below a certain
threshold. We show that the Si/Au/etchant interface length also affects
the etch rate and should thus be considered when optimizing the MACE
experimental parameters. Finally, our results demonstrate that colloidal
templates with small grain sizes (i.e., <100 μm2) can yield significant problems during the pattern transfer because
of a high density of defects at the grain boundaries that negatively
affects the metal film stability. As such, this work provides guidelines
for the large-scale synthesis of Si micro- and nanowire arrays via MACE, relevant for both new and experienced researchers
working with MACE.