Different Er centres in Si and their use for electroluminescent devices

Jantsch, W.; Lanzerstorfer, S.; Palmetshofer, L.; Stepikhova, M. V.; Preier, H.

doi:10.1016/s0022-2313(98)00065-9

Cited by 36 publications

(18 citation statements)

References 25 publications

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“…The observed PL peaks originate from the Er:O complexes in oxide phase which is closely related to silica formed by thermal oxidation of OPS. We did not reveal a peak at 1548 nm that was recently observed in [10] and attributed to Er ions, which are diffused into the silicon nanoclusters of PS. This means that Er ions are situated in the oxide phase of the partially oxidized PS but not inside silicon nanoclusters.…”

Section: Resultscontrasting

confidence: 59%

“…The FWHM of the peaks are 2.5 and 3.6 meV, respectively. The two observed peaks are the only resolved Stark structure of FOPS:Er PL spectrum at 77 K. We believe that FOPS:Er is an inhomogeneously broadened system and there are a wide varieties of similar Er centers (ensemble of centers) with varying neighborhood [2,10]. PL peaks originate from the Er:O complexes in oxide phase of FOPS.…”

Section: Resultsmentioning

confidence: 81%

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Photoluminescence from erbium incorporated in oxidized porous silicon

et al. 2005

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Section: Resultscontrasting

confidence: 59%

Section: Resultsmentioning

confidence: 81%

Photoluminescence from erbium incorporated in oxidized porous silicon

et al. 2005

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“…While no oxygen was intentionally introduced, a one order of magnitude higher O concentration in the multinanolayer structure than in the Cz-Si substrate has been concluded. For comparison, the properties of an Er and O ion implanted sample (IMPL) (annealed at 900 C in 30 min in nitrogen) will also be presented [62]. Specifications of the samples whose properties will be discussed are summarized in Table 1.…”

Section: Er-1 Center In Si/si:er Multinanolayer Structuresmentioning

confidence: 99%

Photonic Properties of Er-Doped Crystalline Silicon

Vinh

Gregorkiewicz

2009

Proc. IEEE

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| During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.

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“…As this wavelength coincides with the low-loss window of silica-based optical fibers and the luminescence wavelength is strongly independent of host material and temperature, a large amount of research activity is being devoted to the study of Er-doped materials for potential use in optoelectronic components [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 90%