Different evolution of the intrinsic gap in strongly correlated SmB<sub>6</sub>in contrast to YbB<sub>12</sub>

Yamaguchi, Junichi; Sekiyama, A.; Kimura, Masato; Sugiyama, Hiroshi; Tomida, Y; Funabashi, G.; Komori, Sachio; Balashov, T.; Wulfhekel, Wulf; Ito, Takahiro; Kimura, S.; Higashiya, A.; Tamasaku, Kenji; Yabashi, Makina; Ishikawa, Tetsuya; Yeo, Sunmog; Lee, S. I.; Iga, Fumitoshi; Takabatake, Toshiro; Suga, S.

doi:10.1088/1367-2630/15/4/043042

Cited by 21 publications

(17 citation statements)

References 52 publications

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“…This is consistent with the hard photoemission spectroscopy data from Ref. 28, which show that the gap for x = 0.15 is only a little smaller than for x = 0, and for x = 0.5, there is no trace of a Kondo peak.…”

Section: Resultssupporting

confidence: 91%

Effects of Eu doping on SmB6single crystals

et al. 2012

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The various phases in Sm 1−x Eu x B 6 are investigated based on magnetic susceptibility, resistivity, and Hall effect measurements. The end compounds are a Kondo insulator (SmB 6 ) and a polaronic ferromagnet (EuB 6 ). For x ≈ 0.2, the ground state undergoes a transition from a Kondo insulator to an antiferromagnetic (AF) insulator phase. Further doping induces a transition to an AF metal at x ≈ 0.4. The spin gap is reduced rapidly with the Eu substitution, while there is a charge gap up to x ≈ 0.4. The Hall effect indicates a dramatic decrease in the carrier density at low temperatures (T ) for the Kondo insulator regime, whereas, the carrier density is almost independent of T in the AF metallic phase.

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Section: Resultssupporting

confidence: 91%

Effects of Eu doping on SmB6single crystals

et al. 2012

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“…Again, as for R H , the activation energy for lower T is smaller than the one for higher T . 15,[55][56][57] The measured Hall effect saturates below approximately 3 K, even though the resistivity 64 Our results are in line with these findings.…”

Section: Resultssupporting

confidence: 88%

Physical properties of SmxB6 single crystals

et al. 2019

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We study the magnetic susceptibility, electrical resistivity, Hall effect and heat capacity of single crystals of Sm x B 6 for x = 1, 0.94, 0.8, and 0.75. Remarkably, the overall properties of the crystals do not qualitatively depend on the density of vacancies. The topological surface states are seen at low temperatures in the electrical transport properties as the bulk conductivity freezes out. Even a large number of Sm vacancies does not close the hybridization gap. The linear term in the specific heat γ, of unclear origin, remains large but decreases gradually with x. The shoulder in the density of states, brought by the hybridized 4f states and observed in the susceptibility and the specific heat, does not move but decreases its height with decreasing x. The specific heat also displays a weak Schottky anomaly at about 1.5 K for all x, except for the x = 0.75 sample. This Schottky anomaly is only slightly field-dependent and of unknown origin.

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“…Fourth, the f peak intensity at high temperatures is obviously higher in the mixed valence regime because of the presence of the atomic multiplet 6 H 5/2 state. Thus, although the lattice coherence has not been developed, it is still possible to observe the peak structure near E F 35 , 83 .…”

Section: Resultsmentioning

confidence: 99%

Matching DMFT calculations with photoemission spectra of heavy fermion insulators: universal properties of the near-gap spectra of SmB6

Min

Goth

Lutz

et al. 2017

Sci Rep

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Paramagnetic heavy fermion insulators consist of fully occupied quasiparticle bands inherent to Fermi liquid theory. The gap emergence below a characteristic temperature is the ultimate sign of coherence for a many-body system, which in addition can induce a non-trivial band topology. Here, we demonstrate a simple and efficient method to compare a model study and an experimental result for heavy fermion insulators. The temperature dependence of the gap formation in both local moment and mixed valence regimes is captured within the dynamical mean field (DMFT) approximation to the periodic Anderson model (PAM). Using the topological coherence temperature as the scaling factor and choosing the input parameter set within the mixed valence regime, we can unambiguously link the theoretical energy scales to the experimental ones. As a particularly important result, we find improved consistency between the scaled DMFT density of states and the photoemission near-gap spectra of samarium hexaboride (SmB6).

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Different evolution of the intrinsic gap in strongly correlated SmB₆in contrast to YbB₁₂

Abstract: Dependence of the spectral functions near the Fermi level on temperature and rare-earth atom doping was studied in detail for strongly correlated alloys Sm 1−x Eu x B 6 and Yb 1−x Lu x B 12 by photoelectron spectroscopy

Cited by 21 publications

References 52 publications

Effects of Eu doping on SmB6single crystals

Effects of Eu doping on SmB6single crystals

Physical properties of SmxB6 single crystals

Matching DMFT calculations with photoemission spectra of heavy fermion insulators: universal properties of the near-gap spectra of SmB6

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Different evolution of the intrinsic gap in strongly correlated SmB6in contrast to YbB12

Abstract: Dependence of the spectral functions near the Fermi level on temperature and rare-earth atom doping was studied in detail for strongly correlated alloys Sm 1−x Eu x B 6 and Yb 1−x Lu x B 12 by photoelectron spectroscopy

Cited by 21 publications

References 52 publications

Effects of Eu doping on SmB6single crystals

Effects of Eu doping on SmB6single crystals

Physical properties of SmxB6 single crystals

Matching DMFT calculations with photoemission spectra of heavy fermion insulators: universal properties of the near-gap spectra of SmB6

Contact Info

Product

Resources

About

Different evolution of the intrinsic gap in strongly correlated SmB₆in contrast to YbB₁₂