1998
DOI: 10.1063/1.368076
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Different paths to tunability in III–V quantum dots

Abstract: Tunability in the concentration and average dimensions of self-forming semiconductor quantum dots (QDs) has been attained. Three of the approaches examined here are: variations with temperature, group V partial pressure and with substrate miscut angle. Thermally activated group III adatom mobilities result in larger diameters and lower concentrations with increasing deposition temperatures. These variations are presented for InGaAs/GaAs and AlInAs/AlGaAs, where striking differences were seen. Tunability in the… Show more

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Cited by 49 publications
(29 citation statements)
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“…It is seen that increase of V/ III ratio leads to increased size of QDs. Similar observations have been reported for MBE grown InAs QDs [9], MOCVD grown InGaAs QDs [10] using AsH 3 , and MOCVD grown InGaAs QDs using TBAs [11], indicating a general behavior independent of growth technique and chemistry of the arsenic precursor. The dependence can be explained in terms of surface energy [11].…”
Section: Resultssupporting
confidence: 79%
“…It is seen that increase of V/ III ratio leads to increased size of QDs. Similar observations have been reported for MBE grown InAs QDs [9], MOCVD grown InGaAs QDs [10] using AsH 3 , and MOCVD grown InGaAs QDs using TBAs [11], indicating a general behavior independent of growth technique and chemistry of the arsenic precursor. The dependence can be explained in terms of surface energy [11].…”
Section: Resultssupporting
confidence: 79%
“…Stranski-Krastanow In(Ga)As/GaAs quantum dots (QDs), grown by molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) [1][2][3][4][5][6], are the subject of great scientific and technological interest. The intense research in this field is primarily aimed to grow In(Ga)As QDs on GaAs substrate which are optically active in the long wavelength region, ranging from 1.3 to 1.55 mm.…”
Section: Introductionmentioning
confidence: 99%
“…3 and 4͒ or InAlAs/AlGaAs ͑Refs. 4 and 5͒ have been studied extensively, as the stoichiometry is considerably easier to control due to the fact that the incorporation of cations is nearly 100%, regardless of the growth technique used. For metalorganic chemical vapor deposition ͑MOCVD͒, the mixing in the cation sublattice is determined by the rate of mass transport of each group-III element to the surface.…”
Section: Introductionmentioning
confidence: 99%