Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs

Yang, Yingying; Gong, Pei; Ma, Wan-Duo; Li, Yalin; Fang, Xiao‐Yong; Jia, Ya-Hui; Cao, Mao‐Sheng

doi:10.1016/j.physleta.2020.126602

Cited by 9 publications

(4 citation statements)

References 26 publications

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“…In this paper, although the SiCNT model is sp 2 bonding configuration during modeling, there are both sp 2 bonding configuration and sp 3 bonding configuration after optimization, which is consistent with the experimental results. [22] The stability of doped SiCNT structure can be evaluated by the binding energy (or cohesive energy), [36] which is expressed as…”

Section: Structural Stabilitymentioning

confidence: 99%

“…In the case where group-V element substitutes for C atom, the conductivity of As C -SiCNT is the smallest because of its lowest impurity concentration and smallest carrier concentration. [36] Similarly, in the case where group-V element replaces Si atom, because the carrier concentration is the lowest, the conductivity of N Si -SiCNT is also the smallest.…”

Section: Optical Absorption and Photo-induced Carriersmentioning

confidence: 99%

“…When Si atom is replaced, the group-V atom has little effect on the SiCNT valence band. Therefore, the photoconductivity in the C region is almost unchanged; while when C atom is replaced, the pelectron effect of P, As, Sb are enhanced, [36] resulting in a closer relationship between the B spectral band and C spectral band.…”

Section: Optical Absorption and Photo-induced Carriersmentioning

confidence: 99%

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Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Yang¹,

Gong²,

Ma³

et al. 2021

Chinese Phys. B

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Silicon carbide nanotubes (SiCNTs) have broad application prospects in the field of micro-nanodevices due to their excellent physical properties. Based on first-principles, the difference between optical properties of SiCNTs where C atom or Si atom is replaced by group-V element is studied. The results show that the optical absorptions of SiCNTs doped by different elements are significantly different in the band of 600 nm–1500 nm. The differences in photoconductivity, caused by different doping elements, are reflected mainly in the band above 620 nm, the difference in dielectric function and refractive index of SiCNTs are reflected mainly in the band above 500 nm. Further analysis shows that SiCNTs doped with different elements change their band structures, resulting in the differences among their optical properties. The calculation of formation energy shows that SiCNTs are more stable when group-V element replaces Si atom, except N atom. These research results will be beneficial to the applications of SiC nanomaterials in optoelectronic devices and provide a theoretical basis for selecting the SiCNTs’ dopants.

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Section: Structural Stabilitymentioning

confidence: 99%

Section: Optical Absorption and Photo-induced Carriersmentioning

confidence: 99%

Section: Optical Absorption and Photo-induced Carriersmentioning

confidence: 99%

See 1 more Smart Citation

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Yang¹,

Gong²,

Ma³

et al. 2021

Chinese Phys. B

Self Cite

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“…However, large transmittance modulation means a large number of ions inside the electrochromic materials which is to some extent opposite to the short response time. It can also be reasonably explained when considering doping in electrochromic materials: shallow doping provides a large number of carriers to accommodate ions (large transmittance modulation) but reduces the recombination rate (long response time); deep doping shows the opposite [ 19 ]. In addition, the short response time is more related to loose structured electrochromic materials.…”

Section: Introductionmentioning

confidence: 99%

Boosting Transport Kinetics of Ions and Electrons Simultaneously by Ti3C2Tx (MXene) Addition for Enhanced Electrochromic Performance

Fang

et al. 2020

Nano-Micro Lett.

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Electrochromic technology plays a significant role in energy conservation, while its performance is greatly limited by the transport behavior of ions and electrons. Hence, an electrochromic system with overall excellent performances still need to be explored. Initially motivated by the high ionic and electronic conductivity of transition metal carbide or nitride (MXene), we design a feasible procedure to synthesize the MXene/WO3−x composite electrochromic film. The consequently boosted electrochromic performances prove that the addition of MXene is an effective strategy for simultaneously enhancing electrons and ions transport behavior in electrochromic layer. The MXene/WO3−x electrochromic device exhibits enhanced transmittance modulation and coloration efficiency (60.4%, 69.1 cm2 C−1), higher diffusion coefficient of Li+ and excellent cycling stability (200 cycles) over the pure WO3−x device. Meanwhile, numerical stimulation theoretically explores the mechanism and kinetics of the lithium ion diffusion, and proves the spatial and time distributions of higher Li+ concentration in MXene/WO3−x composite electrochromic layer. Both experiments and theoretical data reveal that the addition of MXene is effective to promote the transport kinetics of ions and electrons simultaneously and thus realizing a high-performance electrochromic device. This work opens new avenues for electrochromic materials design and deepens the study of kinetics mechanism of ion diffusion in electrochromic devices.

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Emerging trends in lanthanide-based upconversion and downconversion material for PSCs & DSSCs

Nowsherwan,

Khan,

Nowsherwan

et al. 2024

J Mater Sci

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Different substitutions lead to differences in the transport and recombination properties of group V doped SiCNTs

Cited by 9 publications

References 26 publications

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Boosting Transport Kinetics of Ions and Electrons Simultaneously by Ti3C2Tx (MXene) Addition for Enhanced Electrochromic Performance

Emerging trends in lanthanide-based upconversion and downconversion material for PSCs & DSSCs

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