Differential effects of Sn and Si solutes on the microstructure and properties of Cu–Ni–Al alloys with coherent L12-γ′ phases

Li, Z.M.; Meng, Weiwei; Hu, Yan; Zheng, Yuehong; Liu, R.W.; Li, Jiansheng; Liu, Tao; Liu, Qing; Li, X.N.

doi:10.1016/j.vacuum.2023.112355

Cited by 4 publications

(1 citation statement)

References 37 publications

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“…The addition of doped elements, such as Ti, Zr, Mn, and Mo, in Cu alloy tends to precipitate at the grain boundary, interface, and defects [20][21][22]. It is known that Cu and Ni are miscible due to their similar crystal structures, slight differences in atomic radius, and electronegativity [23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

Wang,

Guo,

Dong

et al. 2024

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In this study, the barrier properties and diffusion behavior of carbon-doped Cu(Ni) alloy film were investigated. The films were fabricated using magnetron sputtering on a barrierless silicon substrate. X-ray diffraction patterns and electric resistivity results demonstrated that the barrierless Cu(NiC) alloy films remained thermally stable up to 650 °C. Transmission electron microscopy images provided the presence of a self-formed diffusion layer between the Cu(NiC) alloy and Si substrate. The effect of carbon-doped atoms on the diffusion behavior of the Cu(NiC) films was analyzed by X-ray photoemission spectroscopy depth profile. Results revealed that carbon doping can improve the barrier properties of barrierless Cu(Ni) film. Moreover, X-ray photoemission spectroscopy was performed to examine the chemical states of the self-formed layer at the Cu(NiC)/Si interface. The self-formed diffusion layer was found to consist of Cu metal, Ni metal, Si, Cu2O, NiO, and SiO2.

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