Doping of the clad layers in thin GaAs/GaInP heterostructures, displaces the band energy discontinuity, modifies the carrier concentration in the active GaAs region and changes the quality of the hetero-interfaces. As a result, internal and consequently external quantum efficiencies in the double heterostructure are affected. In this paper, the interfacial quality of GaAs/GaInP heterostructure is systematically investigated by adjusting the doping level and type (n or p) of the cladding layer. An optimum structure for laser cooling applications is proposed.Keywords: semiconductor laser cooling, external quantum efficiency, internal quantum efficiency, bandgap discontinuity, double heterostructure design, GaAs/GaInp, GaAs/AlGaAs.