Differential measurements of light power variations through Si photodiodes in a bridge configuration for high-sensitivity chemical/biological optical sensing

A (CH3)2CNHCH3PbBr3/CH3NH3PbBr3 core–shell heterostructure fabricated by an in situ a-site reaction for fast response 1D perovskite photodetectors

“…[1][2][3] Typical photodetectors are made of inorganic semiconductors such as Si, GaN, ZnO, and InGaAs. 2,[4][5][6] Although these traditional inorganic photodetectors have mature fabrication technologies, the expensive manufacture process and mechanical inflexibility hindered their further development in large-area and low-cost applications. 7,8 In recent years, solution-processable optoelectronic materials, such as organic-inorganic halide perovskites (OHPs), have emerged as a promising class of semiconductors in the field of optoelectronic devices.…”

Graphene Quantum Dot-Decorated Vertically Oriented Graphene/Germanium Heterojunctions for Near-Infrared Photodetectors

“…As an important class of optoelectronic devices, photodetectors are applied in many fields, including optical communication, image sensing, and chemical/biological detection. − Recently, photodetectors comprising graphene films and graphene derivatives have attracted tremendous notice because of their unique chemical/physical properties. The extremely high carrier mobility of graphene films enables ultrafast conversion from photons to electrical signals to facilitate high-speed photodetection. , Additionally, the optical/electrical properties of graphene films, especially the band alignments, carrier densities, and polarities, can be tuned precisely by adjusting chemical or electrostatic doping, consequently providing more flexibility in optimizing the performance of photodetectors. , However, the low light absorption rate (2.3% for monolayer graphene films) and short exciton lifetime characteristics of pristine graphene hamper its practical application. ,− To obtain higher properties of graphene film-based photodetectors, some techniques such as graphene film functional modification, , assembly of heterojunctions, , and changing the morphology of graphene films , have been proposed and these techniques have made great progress.…”

Graphene-Based Semiconductor Heterostructures for Photodetectors

“…A photodetector (PD) is a device for detecting light, the underlying mechanism is conversion of light to an electrical signal called a photocurrent (PC). PDs are used in a wide range of academic and industrial fields, including image sensing, optical communications, environmental monitoring, and chemical/biological sensing [ 1 , 2 , 3 ]. In PDs, usually made of inorganic or organic semiconducting materials, incident photons are absorbed and subsequently electron-hole pairs are generated, thereby producing PC.…”