Integration of waferâscale oxide and semiconductor materials meets the difficulties of residual stress and materials incompatibility. In this work, Ag NPs thin film is contributed as an energy confinement layer between oxide (Sapphire) and semiconductor (Si) wafers to localize the materials interaction during ultrafast laser irradiation. Due to the plasmonic effects generated within constructed dielectricâmetalâdielectric structures (i.e., SapphireâAgâSi), thermal diffusion and chemical reaction between Ag and its neighboring materials facilitate the microwelding of Sapphire and Si wafers. Ag NPs can be totally sintered within the junction area to bridge oxide and semiconductor, while AlâOâAg bond and AgâSi bond are formed at AgâSapphire and AgâSi interfaces, respectively. Asâreceived heterogeneous joint exhibits a high shear strength up to 5.4 MPa, with the fracture occurring inside Si wafer. Meanwhile, insertion of metal nanolayer can greatly relieve the residual stressâinduced microcracking inside the brittle materials. Such waferâscale Sapphire and Si interconnects thus show robust strength and excellent impermeability even after thermal shocking (â40 °C to 120 °C) for 200 cycles. This metal NPs layerâassisted plasmonic microwelding technology can extend to broad materials integration, which is promising for highâperformance microdevices development in MEMS, MOEMS, or microfluidics.