Diffraction of light by sound in solids

Determination of Some Kinetic Parameters of Fast Surface States in Silicon Single Crystals by Means of Surface Acoustic Wave Method

“…The presented method is based on the phenomena of SAW propagation in a system: piezoelectric waveguide-semiconductor structure. The electric field, which accompanies a surface wave in piezoelectric waveguide, penetrates the semiconductor to a depth equal to Debye's screening length [3][4][5]. Thus, the wave and carriers interaction will be manifested in the semiconductor in the form of acoustoelectric effects [4,12] and in the piezoelectric waveguide -by an additional attenuation coefficient (the so-called electron attenuation) and by changing the velocity of the acoustic wave [6].…”

“…Among the methods of investigations of semiconductor surfaces, there are no methods of investigating the kinetic properties of electrical carriers in fast and very fast surface states [1]. The existing methods allow only investigations of the surface states with a carrier lifetime τ of above 10 −8 s [1][2][3]. In the case of extrinsic semiconductors the surface states may, however, be considerably faster (the carrier lifetime in surface traps is usually smaller than 10 −8 s).…”

“…For some years attention has been paid to the influence of the physical state of the near-surface region of a semiconductor on the results of investigations of the acoustoelectric effects in piezoelectric-semiconductor systems [3][4][5][6][7][8][9]. Also recently attention has been paid to the possibility of applying Rayleigh's surface acoustic waves (SAWs) for investigations of various parameters of solid states [10][11][12][13][14].…”