2012
DOI: 10.1016/j.egypro.2012.07.073
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Diffractive Backside Structures via Nanoimprint Lithography

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Cited by 21 publications
(12 citation statements)
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“…Typically, texturing of the silicon wafer leads to increased S back due to surface enlargement and plasma damage. Recently, a solar cell structure was presented in which the diffraction grating is electrically insulated from the electrically active region [20]. This was achieved by depositing a thin layer of Al 2 O 3 on the un-textured rear side of the Si wafer by atomic layer deposition, followed by an amorphous silicon (a-Si) layer.…”
Section: Electrical Simulation Techniquementioning
confidence: 99%
“…Typically, texturing of the silicon wafer leads to increased S back due to surface enlargement and plasma damage. Recently, a solar cell structure was presented in which the diffraction grating is electrically insulated from the electrically active region [20]. This was achieved by depositing a thin layer of Al 2 O 3 on the un-textured rear side of the Si wafer by atomic layer deposition, followed by an amorphous silicon (a-Si) layer.…”
Section: Electrical Simulation Techniquementioning
confidence: 99%
“…Using this processing scheme, linear and crossed gratings were realized on the rear of 200 μm thick monocrystalline silicon wafers [101]. The wafers had a flat front, which was coated with a silicon nitride anti-reflection coating (ARC).…”
Section: Fabrication Of Rear Side Gratings Via Interference Lithograpmentioning
confidence: 99%
“…7 In recent studies, the authors demonstrated for a pitch of 1 μm that crossed gratings outperform linear gratings 18 and that excellent electrical properties of a passivated planar rear can be maintained by etching the grating into an amorphous silicon layer, which is separated from the bulk by a very thin aluminum oxide layer. 19 Both works imprinted the photonic structure on an area of about 5 × 5 cm 2 on 200-μm thick monocrystalline silicon wafers.…”
Section: Rear Side Diffraction Gratingsmentioning
confidence: 99%