Diffusion and structural relaxation in amorphous Mo/Si multilayers

Sloof, W.G.; Loopstra, O.B.; Keijser, Th.H. de; Mittemeijer, E. J.

doi:10.1016/0036-9748(86)90269-3

Cited by 24 publications

(14 citation statements)

References 6 publications

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“…This interest results from the potential uses of the silicides in applications such as the use of films of MoSi 2 as protective layers in oxidizing environments, the use of thin silicide layers either as active electronic materials or as diffusion barriers in the semiconductor industry and the use of the multilayer structures themselves as X-ray optical elements in synchrotron radiation beam lines. , A major concern, however, in determining the feasibility of these applications has been the control of phase formation at the interfaces. Initial reports on the reactivity of relatively thick films of molybdenum on silicon and thick multilayer structures have disagreed with respect to the sequence of phase formation resulting in a number of subsequent investigations. − …”

Section: Introductionmentioning

confidence: 99%

Variation of the Nucleation Energy of Molybdenum Silicides as a Function of the Composition of an Amorphous Precursor

et al. 1998

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Modulated elemental reactants containing alternating elemental layers of molybdenum and silicon with overall thicknesses less than 50 Å were found to crystallize various molybdenum silicides depending on their compositions. Modulated reactants with compositions near 1:2 Mo:Si formed β-molybdenum disilicide at 400 °C, even though β-molybdenum disilicide is metastable with respect to α-molybdenum disilicide below 1900 °C. The activation energy of the nucleation event was found to be 1.9 eV. Modulated reactants with compositions near 5:3 Mo:Si formed Mo5Si3 at 650 °C with an activation energy of 3.0 eV. Modulated reactants with compositions near 3:1 crystallize Mo3Si at 750 °C with an activation energy of 2.2 eV. Low-angle X-ray diffraction indicates that significant interdiffusion occurs during annealing below the formation temperatures of the compounds. Transmission electron microscopy data collected on samples annealed below the formation temperatures indicate that the samples were amorphous. The nucleation energy of the compounds was observed to increase as the stoichiometry of the amorphous phase varied from that of the nucleating compound. This implies that the ability to control the crystalline product using the composition of the amorphous intermediate results from the composition dependence of the nucleation energy for crystallization. Presumably, β-MoSi2 forms because the nucleation barrier is lower than that of the thermodynamically more stable α-MoSi2.

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Section: Introductionmentioning

confidence: 99%

Variation of the Nucleation Energy of Molybdenum Silicides as a Function of the Composition of an Amorphous Precursor

et al. 1998

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“…(4)(5)(6)(7)(8) to calculate the interlayer growth. The data of Sloof et al [3] would, however, suggest degradation in less time due to the lower effective activation energy and (slightly) higher interdiffusion coefficients.…”

Section: /T(k)mentioning

confidence: 90%

“…Consequently, it is believed important to assess the structural stability of these mirrors. Relatively recent work by the authors and other investigators assessed the stability of Mo/Si multilayers [1][2][3][4][5]. Most of these works emphasized temperatures above 400°C and relatively short annealing times.…”

Section: Introductionmentioning

confidence: 99%

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<title>Thermal stability of Mo/Si multilayers</title>

et al. 1992

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“…In systems such as Nb-Si, Co-Si, Y-Si, Fe-Si, Mo-Si, and W-Si, [1][2][3][4][5][6][7] interfacial reactions often take place easily in the as-deposited state or during the heat-treatment process, and the understanding of interfacial behaviors as well as their microstructures is relatively advanced. Since the physical properties of metal-Si multilayers depend greatly on the details of their microstructure, considerable experimental and theoretical efforts have been focused on determining the microstructures.…”

Section: Introductionmentioning

confidence: 99%

Investigation of interfacial phenomena in Ag–Si multilayers during the annealing process

et al. 1999

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Interfacial phenomena and microstructure in Ag-Si multilayers with a modulation period of 7.64 nm during annealing from 323 to 573 K were investigated by in situ x-ray diffraction and high-resolution transmission electron microscopy. Uphill and downhill diffusion were observed on annealing. The temperature dependence of the effective diffusion coefficient from 373 K (as to downhill diffusion regime) to 523 K was D e ‫ס‬ 2.02 × 10 −20 exp(−0.24 eV/k B T) m 2 /s. Diffusion of silicon atoms along silver grain boundaries was proposed as the main diffusion mechanism. After annealing, continuous silver sublayers changed to nanometer-sized silver particles (about 4.5 nm) coated completely by amorphous silicon.

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Diffusion and structural relaxation in amorphous Mo/Si multilayers

Cited by 24 publications

References 6 publications

Variation of the Nucleation Energy of Molybdenum Silicides as a Function of the Composition of an Amorphous Precursor

Variation of the Nucleation Energy of Molybdenum Silicides as a Function of the Composition of an Amorphous Precursor

<title>Thermal stability of Mo/Si multilayers</title>

Investigation of interfacial phenomena in Ag–Si multilayers during the annealing process

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