Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(<i>tert</i>-butylimido)bis(dimethylamido)tungsten and ammonia

Becker, Jill; Gordon, Roy G.

doi:10.1063/1.1565699

Cited by 145 publications

(98 citation statements)

References 3 publications

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“…The films were deposited in a flow-type reactor operated under 0.3 torr [23]. The Pr precursor was kept at 125°C, and the TMA (Aldrich, 99.9999 %) and water (ultrahigh purity) at room temperature.…”

Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications

Rouffignac

Gordon

2006

Chemical Vapor Deposition

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Praseodymium aluminum oxide (PAO) thin films were grown by atomic layer deposition (ALD) from a new precursor, tris(N,N′-diisopropylacetamidinato) praseodymium, (Pr(amd) 3 ), trimethylaluminum (TMA), and water. Smooth, amorphous films having varying compositions of the general formula Pr x Al 2-x O 3 were deposited on HF-last silicon and analyzed for physical and electrical characteristics. The films were pure according to Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS). The permittivity of the thin film with the stoichiometry of Pr 1.15 Al 0.85 O 3 was 18, and all annealed films displayed very low leakage currents compared to other high-k oxide films deposited using ALD. A leakage current density of 1.1 × 10 -4 A cm -2 was achieved for a PAO film with an equivalent oxide thickness of 1.46 nm. Annealed films also displayed nearly zero flat-band voltage shifts and low hysteresis (< 10 mV). The optimal growth parameters and electrical properties were achieved with Pr 1.15 Al 0.85 O 3 . Atomic force microscopy (AFM) determined that high temperature annealing (850°C) had no effect on the smoothness of the films (rms of 0.17 nm).

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Section: Methodsmentioning

confidence: 99%

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications

Rouffignac

Gordon

2006

Chemical Vapor Deposition

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“…Tungsten nitrides, on the other hand, are characterized by high melting point, high hardness, chemical inertness and good thermal stability [5]. For these reasons, they are used for diffusion barriers in LBNL-59900 microelectronics [6,7] and electrodes in semiconductor devices [8]. Therefore, a combination of these materials as tungsten oxynitride, WO x N y , promises the possibility to tune the structural, optical and electrical properties in a wide range as desired for various applications.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

Mohamed

Anders

2006

Surface and Coatings Technology

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Thin films of tungsten oxynitrides were prepared by dual magnetron sputtering of tungsten using argon/oxygen/nitrogen gas mixtures with various nitrogen/oxygen ratios.The presence of even relatively small amounts of oxygen led to close-to-stoichiometric WO 3 , with little incorporation of nitrogen, therefore the films were labeled as WO x (N y ). Oxygen had a great effect not only on the composition but on the structure of WO x (N y ) films, as shown by Rutherford backscattering and x-ray diffraction, respectively. Significant incorporation of nitrogen occurred only when the nitrogen partial pressure exceeded 89% of the total reactive gas pressure. Sharp changes in the stoichiometry, deposition rate, room temperature resistivity, electrical activation energy and optical band gap were observed when the nitrogen/oxygen ratio was high. The deposition rate increased from 0.31 to 0.89 nm/s, LBNL-59900 1 the room temperature resistivity decreased from 1.65 × 10 8 to 1.82 × 10 -2 Ωcm, the electrical activation energy decreased from 0.97 to 0.067 eV, and the optical band gap decreased from 3.19 to 2.94 eV upon nitrogen incorporation into the films. WO x (N y ) films were highly transparent as long as the nitrogen incorporation was low, and were brownish (absorbing) and partially reflecting as nitrogen incorporation became significant.

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“…Tungsten nitride can be deposited by reaction of ammonia with a tungsten precursor bis(tert-butylimido)bis(dimethylamido)tungsten(VI) [78,79]. Hydrogen first transfers from surface NH groups to dimethylamido groups on the precursor to free dimethylamine gas as a byproduct: The product at this stage is the hypothetical, unstable WN 2 , which must lose nitrogen to form the known stable product WN.…”

Section: Ald Reactions That Transfer Hydrogenmentioning

confidence: 99%

ALD Precursors and Reaction Mechanisms

Gordon

2013

Atomic Layer Deposition for Semiconductors

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ALD has become accepted as a reliable tool for production of thin films in the microelectronics industry. Dielectrics and metal electrodes for DRAM capacitors are now routinely produced by ALD, which is the only technique capable of uniformly coating inside the narrow structures required by current technology. Transistors will soon be produced as 3D structures, with requirements for conformal coatings over their increasingly complex surfaces. Metal circuits between transistors are also pushing toward narrower and deeper structures, such as through-silicon vias. In order to extend the use of ALD into these new areas, a greater variety of materials will need to be deposited.Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability, and self-limited reactivity with substrates and with the films being deposited. The precursor vapor should not etch or corrode the substrate or deposited film. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with a melting point below its vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, non-hazardous, and simple and inexpensive to make. In applications of ALD to microelectronics, precursors with high purity may be required.It is not easy to find ideal precursors that satisfy all of these requirements. When the properties of precursors are inadequate, satisfactory ALD results cannot be achieved.

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Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia

Cited by 145 publications

References 3 publications

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications

Atomic Layer Deposition of Praseodymium Aluminum Oxide for Electrical Applications

Structural, optical, and electrical properties of WOx(Ny) films deposited by reactive dual magnetron sputtering

ALD Precursors and Reaction Mechanisms

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