Diffusion behavior in spin valves studied by high resolution transmission electron microscopy and nanobeam technique

Effects of controlling Cu spacer inter-diffusion by diffusion barriers on the magnetic and electrical stability of GMR spin-valve devices

“…The lower device temperature as well as the smaller temperature gradient generated at the Cu/CoFe interface as shown in Fig. 7(b) due to the lower resistivity of CoFe (r Co 90 Fe 10 ¼ $ 20 mWÀcm) compared with that of Co (r Co ¼ $ 450 mWÀcm) in thin film [26,27], and the more effectively controlled Cu spacer interdiffusion due to the insolubility of both Co and Fe with Cu [28] are assumed to be the main physical reason for the technical promises of CoFe diffusion barrier for successfully controlling the magnetic degradation of EBGMR SVSDs.…”