2016
DOI: 10.1016/j.vacuum.2016.08.018
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Diffusion brazing of monocrystal silicon by using germanium as filler material

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Cited by 3 publications
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“…Upon elevating the brazing temperature, its thickness increases. When the reaction layer was first formed, its growth was then controlled through a diffusion mechanism [29]. It is noteworthy that the diffusion rate was related to concentration gradient and temperature.…”
Section: Resultsmentioning
confidence: 99%
“…Upon elevating the brazing temperature, its thickness increases. When the reaction layer was first formed, its growth was then controlled through a diffusion mechanism [29]. It is noteworthy that the diffusion rate was related to concentration gradient and temperature.…”
Section: Resultsmentioning
confidence: 99%