Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n<sup>+</sup>/p/p<sup>+</sup>) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

Abstract

The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in resonance at temperature (T opt ). For this same magnetic field, the diffusion coefficient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω c ). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n + /p/p + ), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.

A comprehensive review on potential of diffusion length enhancement to upraise perovskite solar cell performance

“…Diop et al explored the diffusion coefficient of silicon SC at double resonance of temperature and frequency, when the SC is placed at some temperature and subjected to magnetic field [20]. The quest to discover still new techniques for increasing diffusion length led Kedem et al to introduce the method of light-induced increment in the diffusion length.…”

Derivative of Ac back surface recombination velocity as applied to n+/p/p+ silicon solar cell optimum base thickness determination: Effect of both temperature and frequency

“…Previous works have plotted dynamic diffusion coefficient [14,15,[38][39][40][41][42] of minority carriers in the base of the solar cell (Eq. 7).…”

“…The Ac photocurrent density Jph (Sf, Sb, D(ω, T), H α) is obtained and allows to deduce the AC expression Sb(D(ω, T), H α) of minority charge carriers dynamic recombination velocity [11][12][13][14][15] on the base back side (p/p+). The graphic study of this expression as a function of thickness (H), made it possible to deduce a technique for determining the optimum thickness [16][17][18][19][20][21] of the base (Hopt). This work presents the technique of determining the optimum thickness of the base of the solar cell illuminated by its front face (n+), by exploiting the curve of minority carriers dynamic recombination velocity Sb(H, D(ω , T), α), as a function of (H), through the point (Hopt) of zero derivative.…”

Optimisation de l’épaisseur de la base de la photopile (n+/p/p+) au silicium en régime statique sous éclairement polychromatique : Influence de la température et du taux de dopage

“…Cette expression est graphiquement représentée en fonction de l'épaisseur (H), de la photopile de taux de dopage (Nb) donné et maintenue à la température (T). Cette technique appliquée, tient compte des conditions réelles de fonctionnement de la photopile, à travers la qualité spectrale de la lumière (polychromatique) à flux constant, du taux de dopage [16,20] et de la variation de la température [22][23][24] . L'épaisseur optimum (Hopt( D(Nb,T), bi) obtenue est ensuite modélisée en fonction de la température (T), pour différentes valeurs du taux de dopage (Nb) de la base de la photopile.…”