Diffusion coefficients and I–V curves of solid state devices based on single crystals of the Cu–Ag–In–Se system with ionic motion

Arranz, Antonio Fernández de Buján y; Dı́az, R.

doi:10.1016/j.ssi.2014.08.013

Cited by 3 publications

(2 citation statements)

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“…For example, during epitaxial growth of HgCdTe infrared detectors on CdZnTe substrate, diffusion of the impurities into the epilayer has been reported [3], which results in deterioration of the quality of the detectors. It is reported also that the migration of impurities is a possible reason, which causes degradation in the performance of these optoelectronic devices [4][5][6][7]. Due to their wide range of applications [8][9][10][11][12][13][14][15], CdTe based compounds have been extensively studied during the last decade.…”

Section: Introductionmentioning

confidence: 99%

Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

et al. 2018

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In this work we present the transient measurements along a Au/CdTe/Au structure in the temperature range of 323K-363K to deepen the understanding of the electromigration phenomena. Removal of the anode contact and of a thin layer below was necessary after each measurement to have similar distribution of the donor ions in the depletion region for each new measurement. The diffusion coefficients at different temperatures have been determined and the activation energy of the electromigration process was extracted to be 0.36 eV. Current-Voltage measurements have been carried out and revealed that the thermal carrier generation in the depleted region is the dominant carrier mechanism responsible for the bias dependence of the leakage current. The acceptors concentration at different temperatures was determined from the resistivity measurements.

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Section: Introductionmentioning

confidence: 99%

Study of electromigration phenomena in Au/p-type CdTe with two Schottky contacts

et al. 2018

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“…The migration of these impurities in the space charge regions disturbs the semiconductor's electrical properties [1,2]. One of the mechanisms, which cause degradation in the performance of these optoelectronic devices, is migration of impurities [3][4][5][6][7]. Understanding and control of migration of defects in semiconductors is of central importance for developing electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%