Diffusion Coefficients of Impurities in Silicon Melt

Kodera, H.

doi:10.1143/jjap.2.212

Cited by 265 publications

(87 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…/s in liquid silicon [12] enables the fast incorporation of phosphorus atoms from the PSG-layer, up to 800 nm deep into the molten silicon within a few hundred nanoseconds. Subsequently to the laser pulse, the molten silicon cools, re-crystallizes epitaxially, and forms a highly phosphorus doped selective n-type emitter without incorporation of any grain boundaries and dislocations [13].…”

Section: Methodsmentioning

confidence: 99%

Add‐on laser tailored selective emitter solar cells

Roder

Eisele

Grabitz³

et al. 2010

Progress in Photovoltaics

View full text Add to dashboard Cite

An elegant laser tailoring add-on process for silicon solar cells, leading to selectively doped emitters increases their efficiency h by Dh ¼ 0.5% absolute. Our patented, scanned laser doping add-on process locally increases the doping under the front side metallization, thus allowing for shallow doping and less Auger recombination between the contacts. The selective laser add-on process modifies the emitter profile from a shallow error-function type to Gaussian type and enables excellent contact formation by screen printing, normally difficult to achieve for shallow diffused emitters. The significantly deeper doping profile of the laser irradiated samples widens the process window for the firing of screen printed contacts and avoids metal spiking through the pn-junction.

show abstract

Section: Methodsmentioning

confidence: 99%

Add‐on laser tailored selective emitter solar cells

Roder

Eisele

Grabitz³

et al. 2010

Progress in Photovoltaics

View full text Add to dashboard Cite

show abstract

“…Therefore, the laser annealing step is concluded to result in a melted substrate surface layer leading to B diffusion in liquid Si with a diffusion constant of D = 2.4x10 -4 cm 2 s -1 [24]. In addition, convection inside the melt may contribute to the doping process, resulting in the discussed homogeneous doping profile.…”

Section: Resultsmentioning

confidence: 99%

Laser-doping of crystalline silicon substrates using doped silicon nanoparticles

et al. 2013

View full text Add to dashboard Cite

Abstract:Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs) are deposited onto intrinsic Si and laser processed using an 807.5 nm cw-laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate. The doping profile is investigated by secondary ion mass spectroscopy revealing a constant B concentration of 2x10 18 cm -3 throughout the entire analyzed depth of 5 µm. Four-point probe measurements demonstrate that the effective conductivity of the doped sample is increased by almost two orders of magnitude. The absolute doping depth is estimated to be in between 8 µm and 100 µm. Further, a pn-diode is created by laser doping an n-type c-Si substrate using the Si NPs.

show abstract

“…However, the longer melting time has the consequence, that dopand profiles, introduced into the virgin a-Si for emitter, absorber, and back surface field, get intermixed due to diffusion. Typical diffusion constants in liquid silicon are in the 10 -4 to 10 -3 cm²/s range (Kodera, 1963) so that dopands will intermix over a distance of 1 µm within 10 to 100 µs. Nevertheless a one-step crystallization procedure for a solar cell layer system has been done by electron beam melting, discussed in Sect.…”

Section: Basic Considerationsmentioning

confidence: 99%