Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors

Abstract

A series of new single-step methods and their corresponding algorithms with automatic step size adjustment for model equations of fiber Raman amplifiers are proposed and compared in this paper. On the basis of the Newton-Raphson method, multiple shooting algorithms for the two-point boundary value problems involved in solving Raman amplifier propagation equations are constructed. A verified example shows that, compared with the traditional Runge-Kutta methods, the proposed methods can increase the accuracy by more than two orders of magnitude under the same conditions. The simulations for Raman amplifier propagation equations demonstrate that our methods can increase the computing speed by more than 5 times, extend the step size significantly, and improve the stability in comparison with the Dormand-Prince method. The numerical results show that the combination of the multiple shooting algorithms and the proposed methods has the capacity to rapidly and effectively solve the model equations of multipump Raman amplifiers under various conditions such as co-, counter-and bi-directionally pumped schemes, as well as dual-order pumped schemes.

Investigation and Integration of Polycrystalline Silicon/TiN/SiON Gate Stack in Silicon on Thin Buried Oxide Complementary Metal Oxide Semiconductor Field Effect Transistors

“…Figures 4(a The mechanisms of the V fb shift in the TiN gate stacks have been extensively reported. [20][21][22][23] and the Fermi level might be pinned at the midgap of Si. 20) However, in our experiments, Si diffusion was not observed and high-k dielectric was not used.…”

“…[20][21][22][23] and the Fermi level might be pinned at the midgap of Si. 20) However, in our experiments, Si diffusion was not observed and high-k dielectric was not used. Kadoshima et al reported that very thin TiO x at the TiN/SiO 2 interface was likely formed and modulated the work function.…”

High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method

“…The PVD-TiN film could have less impurity, such as carbon and chlorine, and better crystallinity than CVD-TiN. Therefore, the larger crystal of PVD-TiN seemed to block the diffusion of Si and to shift the work function to the positive side (27). Thermal stability of poly-Si/TiN/HfSiON stacks fabricated by PVD-based in-situ method (in-situ PVD-TiN on SPIR-HfSiON) was investigated by using the capacitor fabricated by the flow shown in Fig.…”

Oxygen-induced high-k degradation in TiN/HfSiO gate stacks

“…In addition to interfacial SiO 2 growth, it has been reported that metal elements such as Hf and La atoms in high-k layers diffuse into gate electrode after high-temperature activation annealing [1][2][3][4]. Consequently, a loss of leakage reduction merit due to permittivity lowering of Hf-based high-k layer has been pointed out [4].…”