2007
DOI: 10.1016/j.tsf.2007.03.031
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Diffusion during annealing of Al/Cu/Fe thin films

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Cited by 5 publications
(5 citation statements)
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“…It is important to note that, along the (1, 0) axis, only the (3, 0) spot has appreciable intensity in this structure. The formation of Al 4 Cu 9 has been reported in similar studies during the annealing of Al/Cu/Fe thin films [38], by phase transformation in Cu-Al thin films [39] and by annealing Cu/Al multilayer thin films [40].…”
Section: Leed and Stm Measurementssupporting
confidence: 65%
“…It is important to note that, along the (1, 0) axis, only the (3, 0) spot has appreciable intensity in this structure. The formation of Al 4 Cu 9 has been reported in similar studies during the annealing of Al/Cu/Fe thin films [38], by phase transformation in Cu-Al thin films [39] and by annealing Cu/Al multilayer thin films [40].…”
Section: Leed and Stm Measurementssupporting
confidence: 65%
“…Films are deposited at a pressure of 2.10 À2 mbar in an atmosphere containing 10% H 2 -90% Ar. The sputtering system is equipped with three independent magnetrons focused at the center of the substrate holder and inclined by 30 with respect to the substrate surface normal. The target to substrate distance is set equal to 10 cm and the sample rotates at 28 rpm during deposition to ensure homogeneity.…”
Section: Methodsmentioning
confidence: 99%
“…The formation of Al 2 Cu, Al 4 Cu 9 , AlCu 3 , and Al x Cu has also been reported in similar studies. [22][23][24][25] In particular, Jiang et al 24 have shown that the formation of -Al 2 Cu and ␥-Al 4 Cu 9 is controlled by interfacial and grain boundary diffusion. Activation energies of about 0.8 eV have been determined for the formation of these two phases.…”
Section: Introductionmentioning
confidence: 99%