Universal arrhenius temperature activated charge transport in diodes from disordered organic semiconductors Craciun, N. I.; Wildeman, J.; Blom, P. W. M. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Charge transport models developed for disordered organic semiconductors predict a non-Arrhenius temperature dependence ln / 1=T 2 for the mobility . We demonstrate that in space-charge limited diodes the hole mobility ( h ) of a large variety of organic semiconductors shows a universal Arrhenius temperature dependence h T 0 expÿ=kT at low fields, due to the presence of extrinsic carriers from the Ohmic contact. The transport in a range of organic semiconductors, with a variation in room temperature mobility of more than 6 orders of magnitude, is characterized by a universal mobility 0 of 30-40 cm 2 =V s. As a result, we can predict the full temperature dependence of their charge transport properties with only the mobility at one temperature known.