Diffusion in Bulk Solids and Thin Films

Gupta, D.

doi:10.1016/b978-081551501-2.50003-4

Cited by 15 publications

(19 citation statements)

References 77 publications

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“…The slope resulted in an estimate of the apparent activation energy of 117 kJ/mol. As a rule of thumb for grain boundary diffusion in metals, Gupta suggests that the activation energy in cal/mol should be 17–25 times melting temperature of the diffusion matrix in Kelvin . For grain boundary diffusion in Mo, this gives an estimated activation energy of roughly 206–303 kJ/mol.…”

Section: Resultsmentioning

confidence: 99%

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

et al. 2014

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Molybdenum (Mo) coated soda‐lime glass is a commonly used substrate for Cu(InGa)Se2 solar cells as it also acts as the sodium (Na) source, which improves the efficiency of these devices. In this work, we investigate how oxygen controls the segregation and accumulation of Na on the Mo surface. A direct relationship between the concentration of surface oxygen and the amount of Na accumulation is showed. Values for the surface segregation ratio and grain boundary diffusion coefficient for Na in Mo are obtained by fitting diffusion data at several temperatures to a model for grain boundary diffusion. The results of this model reveal that surface oxygen controls the Na saturation level through its effect on the surface segregation of Na. An activation energy for grain boundary diffusion of Na is estimated and is similar to that of MoO bond dissociation in MoO3 suggesting the involvement of this bond during Na transport. © 2014 American Institute of Chemical Engineers AIChE J, 60: 2365–2372, 2014

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Section: Resultsmentioning

confidence: 99%

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

et al. 2014

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“…The normalized intensity (counts per second) of the SL1-3 peaks is summarized and shown in figure 3(b) in order to clearly view the decay in the SL peaks. No detectable decay in the SL peak intensity could be seen for annealing temperatures 600 • C. However, the onset of decay is observed when the samples are annealed at 650 • C, while In order to quantitatively elucidate the interdiffusion in the strained Ge/Si 0.35 Ge 0.65 MQW structure, we studied the interdiffusion coefficient D based on the diffusion theory proposed by Gupta [26]. The interdiffusion coefficient D can be obtained from the logarithmic decay of the low-order MQWs satellite peak integrated intensity using the following equation:…”

Section: Resultsmentioning

confidence: 99%

Silicon–germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

Liu¹,

Leadley

2010

J. Phys. D: Appl. Phys.

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A strain-symmetrized Ge/Si0.35Ge0.65 multiple quantum well (MQW) structure has been grown on a relaxed Si0.2Ge0.8 virtual substrate by reduced pressure chemical vapour deposition. The as-grown Ge/Si0.35Ge0.65 MQW structure with one period thickness of 25 nm (14 nm/11 nm) was annealed in nitrogen ambient at different temperatures from 550 to 750 °C. The thermal stability and interdiffusion properties were studied by high-resolution x-ray diffraction. No obvious interdiffusion or strain relaxation in the Ge/Si0.35Ge0.65 MQW structure was observed for annealing temperatures ⩽600 °C, while the onset of interdiffusion occurred as the temperature was increased to above 650 °C. The interdiffusion coefficient was obtained by analysing the decay rate of Ge/SiGe periodic satellites in the recorded intensity at temperatures 650–750 °C. The extracted activation energy was found to be 3.08 ± 0.1 eV for the strained Ge/Si0.35Ge0.65 MQW structure with an average Ge composition of 85 at%.

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“…In the L1 2 ordered Ni 3 Al intermetallic compounds, certain vacancy-mediated diffusion mechanisms possibly work, such as six-jump-cycle (6JC), sublattice assisted diffusion (AS), antistructure bridge (ASB), etc. [45] The 6JC consists of six jumps and the energy barrier for the cycle is higher than the other mechanisms, [40] so the important diffusion mechanisms relevant to the diffusion behavior of Al in Ni 3 Al are AS and ASB jump as shown in Fig. 3.…”

Section: Diffusion Of Solutesmentioning

confidence: 99%

First-principles study of solute diffusion in Ni ₃ Al

Liu

Wang

2017

Chinese Phys. B

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Using first-principles calculations in combination with Wagner-Schottky and kinetic Monte Carlo methods, the diffusion behaviors of solutes via various vacancy-mediated diffusion mechanisms in L1 2 γ -Ni 3 Al were investigated. The formation energies of the point defects and the migration energies for solutes were calculated. Adding alloying elements can decrease the defect-formation energies of Ni Al , increase the defect-formation energies of Al Ni , and have little effect on the formation energy of V Ni . The migration energies of solutes are related with the site preference and the diffusion mechanism. The diffusion coefficients of Ni, Al, and solutes were calculated, and the concentration of antisite defects plays a crucial role in the elemental diffusion.

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Diffusion in Bulk Solids and Thin Films

Cited by 15 publications

References 77 publications

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

Silicon–germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

First-principles study of solute diffusion in Ni ₃ Al

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Diffusion in Bulk Solids and Thin Films

Cited by 15 publications

References 77 publications

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

Understanding the role of oxygen in the segregation of sodium at the surface of molybdenum coated soda‐lime glass

Silicon–germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

First-principles study of solute diffusion in Ni 3 Al

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First-principles study of solute diffusion in Ni ₃ Al