Diffusion in III-V semiconductors from spin-on-film sources

Abstract

The open-tube diffusion of Sn in GaAs and Zn in InP and InGaAs from spin-on films acting both as solid diffusion sources and as surface passivators is reviewed. Technological processes are described which lead to layers with reproducible, homogeneous properties necessary for device applications. The diffusion models which quantitatively predict the diffusion results are discussed. Experimental results are given showing the influence of film composition, diffusion temperature and time, and substrate properties, on surface morphology, carrier concentration and concentration profile and on carrier mobility. Applications of the process to highly doped, low resistivity contact layers, highly doped p+ gate layers and n-doped FET channels are demonstrated. Finally the potential use of doping from spin-on film instead of or in addition to existing doping processes (e.g. ion implantation) is discussed. It is concluded that this process adds a further degree of flexibility to the technology of III-V semiconductor compounds.

Nature of the bulk defects in GaAs through high-temperature quenching studies

“…Indeed, the model has one significant drawback, which is that it is hard to explain how the separation of the V As and V Ga sites takes place at annealing temperatures of 550-650°C, since such a transmutation would require the unlikely hopping of at least one of the two vacancies to a nearest-neighbor sublattice site. 34 A more likely explanation for the appearance of EL8 and EL5* levels in the RTA samples can be based upon an entirely different picture that is shown schematically in Fig. 3.…”

Atomic Diffusion in Tetrahedral Semiconductors. Approximative Treatment of Diffusion Theories

“…Another important aim is to predict the penetration depth. From (7) and (1Oc) we net where qo1,2 can be calculated from (23). Our results are listed in Table 1, too.…”

“…[4, 51, or open tube methods, e.g. [6]; an interesting recent development is the spin-on technique [7]. Particularly important is the precise control of the diffused regions of a. chip [8].…”

Lanthanide‐doped sol‐gel‐derived films fabricated in mesoporous anodic alumina

“…Various publications are devoted to the sol-gel method, and the publications of the resulting oxide films obtained from colloidal solutions. [1][2][3][4] It was demonstrated in the last ten years that the combination of sol-gel solids with porous anodic alumina (PAA), with its self-organized morphology, is a promising way for creation of materials with advanced optical properties due to the capability of the xerogel to penetrate effectively the pore volume. [5][6][7][8] A schematic diagram of the xerogel-porous anodic alumina structure is depicted in Fig.…”