Diffusion in Silicon and Germanium

Hu, S. M.

doi:10.1007/978-1-4615-8636-4_5

Cited by 56 publications

(53 citation statements)

References 305 publications

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“…The mechanisms suggested in early theoretical work were analyzed by Hu (1973a) and found to be highly unlikely because of energetic reasons. Later, a concerted exchange mechanism was suggested by Pandey (1986).…”

Section: Basic Diffusion Mechanismsmentioning

confidence: 99%

Role of Defects in the Dopant Diffusion in Si

Pichler

2015

Semiconductors and Semimetals

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Section: Basic Diffusion Mechanismsmentioning

confidence: 99%

Role of Defects in the Dopant Diffusion in Si

Pichler

2015

Semiconductors and Semimetals

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“…In contrast, Ga atoms in Ge lattice form Ga-vacancy pairs, diffusing at a rate similar to vacancy self-diffusion. Even though diffusing more efficiently than B, Ga migration in the lattice is slower than of the most n-type dopants in Ge, enabling formation of the shallow p-regions [16][17][18][19][20][21].…”

Section: B Diffusion Parametersmentioning

confidence: 99%

“…[24]. Solid solubility (SS) of Ga in Ge is the highest among all Ge dopants [21]. At 700 °C, which is a temperature of PureB deposition, thus being the highest temperature in the process -Ga solid solubility is more than two orders of magnitude higher than solubility of B.…”

Section: B Diffusion Parametersmentioning

confidence: 99%

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

Marković

Knežević

Nanver

et al. 2021

2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)

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Deposition of a nanometer-thin layer-stack of pure gallium and boron (PureGaB) on arsenic (As)-doped epitaxial germanium (Ge) forms a shallow-junction photodiode, reported to have almost ideal I-V characteristics, low saturation current densities, and high responsivity down to 255 nm wavelengths. In this work, different physical mechanisms that could explain the high anode Gummel number in PureGaB-Ge-on-Si diode have been examined. A model for point-defect-mediated diffusion of B and Ga in Ge has been developed. Formation of a shallow pn junction has been modeled using 1D process simulations of B and/or Ga drive-in from the PureGaB layer. B diffusion resulted in junction depths less than a nanometer deep, while Ga formed a highly doped p + regions with peak concentrations >10 20 cm -3 and junction depths from 31 nm to 123 nm, depending on the applied sets of diffusion parameter. Both approaches have been used to fit the I-V characteristics of a fabricated PureGaB Ge-on-Si diode: B-only diffusion model with negative interface charge concentration of 1.9 10 13 cm -2 for suppression of electron injection and Ga diffusion model, selfsufficient for the explanation of low electron current densities. Both proposed models give possibilities to obtain a Gummel number of Ĭ Ĭ 2×10 14 s/cm 4 , matching the value extracted from I-V characteristics of a fabricated device.

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“…On the contact boundary y = L , we specify the conditions of equality of the chemical potentials and horizontal components of the mass flows of admixtures [6]:…”

Section: Object Of Investigation and Statement Of The Problemmentioning

confidence: 99%

“…The mass transfer is realized between these domains. Since the construction of exact solutions of this problems even for the simplest geometric regions is connected with significant difficulties, the researchers, as a rule, apply the approximate analytic [2,6,13,14] or numerical [4,8,10,17] …”

mentioning

confidence: 99%

Mathematical Modeling of the Steady-State Processes of Convective Diffusion in Regular Structures Under Mixed Boundary Conditions

Chernukha

Dmytruk

2014

J Math Sci

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We study steady-state processes of the mass transfer of admixtures in two-phase regular structures with regard for the periodic character of convective phenomena under mixed boundary conditions. To construct the exact analytic solutions of contact boundary-value problems of this kind, we adapt the method based on the use of different integral transformations in different contacting domains. A relation between these integral transformations is established by using the conditions of imperfect contact. We obtain the analytic solution of the diffusion problem for a two-phase layer of regular structure with regard for convective transfer in one of the phases with preservation of a constant concentration on the surface of this phase and a constant diffusion flow on the boundary of the other phase. The mass flows through the internal interface contact surface are investigated and numerical analysis of the concentration of migrating particles in structural elements of the body is performed.The interpretation of the results of experimental investigations of the processes of mass transfer in polycrystalline bodies and capillary-porous media is based on the solution of the corresponding boundary-value problems of mathematical physics, which take into account the influence of internal structures [9,15,16,18]. In particular, the exact solutions of specific contact boundary-value problems of mass transfer for piecewise homogeneous systems, e.g., spatially regular, are of a certain interest. These media may consist of domains characterized by different diffusion coefficients and the presence or absence of the convective transfer of particles. The mass transfer is realized between these domains. Since the construction of exact solutions of this problems even for the simplest geometric regions is connected with significant difficulties, the researchers, as a rule, apply the approximate analytic [2,6,13,14] or numerical [4,8,10,17] methods.A new method for the construction of the exact solutions of contact boundary-value diffusion problems in bodies with regular structures based on the integral transformations with respect to spatial variables (separate in different contacting domains) was proposed in [12] and then developed in [11]. The analytic solution of the diffusion problem was found for a horizontal layer in the form of a periodic structure formed by two physically different vertical sublayers. On this basis, the transitions to the continuum limits corresponding to the approximations of single inclusion [13] and continual heterodiffusion [7] were investigated.In the present work, this method is generalized to the case where convective transfer is realized in the sublayers of one of the components of periodic structure and constant values of concentration are preserved on the external boundaries and a constant mass flow is specified on one of the boundaries of domains of the other component. For the steady-state mode, we obtain analytic expressions for the concentration of admixtures and mass flows through the internal cont...

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Diffusion in Silicon and Germanium

Cited by 56 publications

References 305 publications

Role of Defects in the Dopant Diffusion in Si

Role of Defects in the Dopant Diffusion in Si

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

Mathematical Modeling of the Steady-State Processes of Convective Diffusion in Regular Structures Under Mixed Boundary Conditions

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