Diffusion in the B20-type phase FeSi

Salamon, Marcel; Mehrer, H.

doi:10.1080/01418619908210413

Cited by 19 publications

(20 citation statements)

References 27 publications

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“…3(b) . Diffusion measurements on MnSi have not been reported yet, but data on the isostructural FeSi suggest that diffusion in B20 compounds is extremely slow 37 . Hence, large thermal vacancy concentrations will be frozen in during cooling already at high temperatures.…”

Section: Resultsmentioning

confidence: 99%

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Reiner

Bauer

Leitner

et al. 2016

Sci Rep

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Outstanding crystalline perfection is a key requirement for the formation of new forms of electronic order in a vast number of widely different materials. Whereas excellent sample quality represents a standard claim in the literature, there are, quite generally, no reliable microscopic probes to establish the nature and concentration of lattice defects such as voids, dislocations and different species of point defects on the level relevant to the length and energy scales inherent to these new forms of order. Here we report an experimental study of the archetypical skyrmion-lattice compound MnSi, where we relate the characteristic types of point defects and their concentration to the magnetic properties by combining different types of positron spectroscopy with ab-initio calculations and bulk measurements. We find that Mn antisite disorder broadens the magnetic phase transitions and lowers their critical temperatures, whereas the skyrmion lattice phase forms for all samples studied underlining the robustness of this topologically non-trivial state. Taken together, this demonstrates the unprecedented sensitivity of positron spectroscopy in studies of new forms of electronic order.

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Section: Resultsmentioning

confidence: 99%

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Reiner

Bauer

Leitner

et al. 2016

Sci Rep

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“…37,38 The presence of voids closer to the Si surface implies that Si is the dominant diffusing species in this silicide film as we would expect in FeSi. 39 To further analyze the morphology of this intruded silicide film, cross-sectional transmission electron microscopy (CSTEM) samples were prepared by combined microcleavage 40 and FIB polishing methods. 41 Special attention was paid during fabrication to maintain the integrity of the silicide film by depositing a protective Pt film on the surface.…”

Section: Resultsmentioning

confidence: 99%

Mechanistic Investigation of the Growth of Fe_1−xCo_xSi (0 ≤ x ≤ 1) and Fe₅(Si_1−yGe_y)₃ (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires

et al. 2011

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We present the chemical vapor deposition (CVD) reactions of the single source precursor Fe(SiCl(3))(2)(CO)(4) over Si, Ge, CoSi(2)/Si, and CoSi/Si substrates to explore the growth and doping processes of silicide nanowires (NWs). Careful investigation of the composition and morphology of the NW products and the intruded silicide films from which they nucleate revealed that the group IV elements (Si, Ge) in the NW products originate from both the precursor and the substrate, while the metal elements incorporated into the NWs (Fe, Co) originate from vapor phase precursor delivery. The use of a Ge growth substrate enabled the successful synthesis of Fe(5)Si(2)Ge NWs, the first report of a metal silicide-germanide alloy NW. Further, investigation of the pyrolysis of the CoSiCl(3)(CO)(4) precursor revealed independent delivery of Co and Si species during CVD reactions. This understanding enabled a new, more robust two-precursor synthetic route to Fe(1-x)Co(x)Si alloy NWs using Fe(SiCl(3))(2)(CO)(4) and CoCl(2).

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“…This implies a "solute dependent grain growth" according to Cahn's theory for grain growth with solute impediment [Cahn J. W., 1962], indicating that the migration of solute atoms with GBs is the rate controlling mechanism for grain growth. In the lower temperature regime of 573-703 K, the activation energy is only 31.2 kJ mol" 1 , which is much lower than the reported activation energy of 212 kJ mol" 1 for lattice diffusion of Si in microcrystalline, disordered bcc-Fe(Si) [Salamon, M., et al, 1999]. Similar small activation energies for grain growth in NC material have been observed by other researchers also [Shukla, S., 2003].…”

Section: Activation Energy For Grain Growthsupporting

confidence: 57%

Development of Fe-Si material for magnetic applications

Biao.¹

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This project investigated the mechanochemical synthesis of nanograined Fe-Si based alloys, the thermal stability of the nanograins, sintering and the magnetic properties of sintered products. Initially, synthesis and thermal stability of a set of nanostructured alloys based on the Fe 75 Si25 composition with ternary additions of Al, Cu and Nb were investigated. The milling conditions required to achieve nanograined and fully alloyed powder were first determined. Thermal stability investigations showed that Al and Nb additions inhibited grain growth more effectively than Cu.However, the Nb containing alloy formed the second phase Fe2Nb which is undesirable for soft magnetic applications. Hence Al was chosen as the promising ternary additive for further detailed studies on sintering and magnetic properties. The sintering behaviours of Fe7sSi25 and Fe75SiisAlio were assessed by conventional pressureless sintering and Spark Plasma Sintering of the nanocrystalline powder compacts. It was shown that Fe75SiisAlio always sintered better and resulted in smaller grain sizes compared to the binary Fe7sSi25, irrespective of the sintering method and the temperature used. Magnetic property measurements showed that the Fe 75 Sii5Alio sintered products exhibited higher saturation induction compared to Fe7sSi25 sintered under the same conditions. This is attributable to their higher sintered density. Thus, addition of Al to Fe7sSi25 is beneficial to attain a nanograined structure, to sinter easily and to derive improved saturation magnetic moment. The grain growth behavior of the two alloys was critically analyzed with the aid of available grain growth theories and it was inferred that grain boundary segregation of alloying elements is the cause of the restraint in the growth of the initial nanograins of a-Fe solid solution. In

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Diffusion in the B20-type phase FeSi

Cited by 19 publications

References 27 publications

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Mechanistic Investigation of the Growth of Fe_1−xCo_xSi (0 ≤ x ≤ 1) and Fe₅(Si_1−yGe_y)₃ (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires

Development of Fe-Si material for magnetic applications

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Diffusion in the B20-type phase FeSi

Cited by 19 publications

References 27 publications

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Positron spectroscopy of point defects in the skyrmion-lattice compound MnSi

Mechanistic Investigation of the Growth of Fe1−xCoxSi (0 ≤ x ≤ 1) and Fe5(Si1−yGey)3 (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires

Development of Fe-Si material for magnetic applications

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Mechanistic Investigation of the Growth of Fe_1−xCo_xSi (0 ≤ x ≤ 1) and Fe₅(Si_1−yGe_y)₃ (0 ≤ y ≤ 0.33) Ternary Alloy Nanowires