Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Aoyama, Takayuki; Tashiro, Hiroko; Suzuki, Kenta

doi:10.1149/1.1391859

Cited by 37 publications

(13 citation statements)

References 10 publications

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“…Therefore, B impurities can diffuse through SiO 2 with relatively low activation barrier by forming B-O complex [21,22]. These results coincide with the B penetration experimental reports [23].…”

Section: First Principles Resultssupporting

confidence: 90%

Atomic Processes at and near Silicon/Silicon Dioxide Interfaces

Shiraishi¹

2005

AIP Conference Proceedings

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Section: First Principles Resultssupporting

confidence: 90%

Atomic Processes at and near Silicon/Silicon Dioxide Interfaces

Shiraishi¹

2005

AIP Conference Proceedings

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“…Although there are non-negligible uncertainties in determining the formation energies and diffusion barriers of the B-related defects in various charge states particularly in the amorphous matrix, the predicted activation energy falls well within the range of 3.5-4.0 eV as reported by previous experiments. 4,7,8 Our findings well support the possibility that B diffusion may be mediated by O vacancy related defects, and thus is enhanced with increasing the defect density. This is analogous to Si self diffusion, [28][29][30][31] shedding some light on the anomalous correlation of B diffusion and Si self-diffusion in a-SiO 2 , as often seen in experiments.…”

Section: B Diffusion and Interconversion Of B-related Defectssupporting

confidence: 76%

“…However, in an amorphous oxide ͑a-SiO 2 ͒ layer, the activation energy of B diffusion has been found to be 3.5-4.0 eV. 4,7,8 The activation energy difference between the crystalline and amorphous cases could be attributed to the fact that the more flexible amorphous network generally yields richer local bonding environments than the crystalline counterpart.…”

Section: Introductionmentioning

confidence: 99%

Structure and diffusion of boron in amorphous silica: Role of oxygen vacancy related defects

Kuo

Hwang

2009

Phys. Rev. B

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Based on first-principles density-functional calculations, we present the structure and diffusion of boron in amorphous silica, as well as in crystalline silica for comparison purpose. We find that incorporation of a boron atom into the amorphous silica matrix results in various minimum-energy configurations with and without oxygen deficient centers, and also the B-related defects can undergo interconversions at elevated temperatures. While B atoms preferentially remain in the trigonal BO 3 form in amorphous silica, our work shows that B diffusion may require transformation of the immobile BO 3 state to a mobile B state by capturing oxygen vacancy related defects equivalent to an S center, which is a combination of an oxygen vacancy and a trivalent Si defect with an unpaired electron. Considering an energy cost for S center creation, our predicted activation energy of B diffusion is in good agreement with experiments. In addition, the defect-mediated diffusion model can explain the observed correlation of B diffusion and Si self-diffusion in amorphous silica.

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“…Here, B atoms substituted in the Si sites of SiO 2 [denoted as 11 which corresponds to the effective thermal B diffusivity, is used in our simulation. Consequently, the only parameter needed to fit the experimental B profiles in Fig.…”

mentioning

confidence: 99%

Correlated diffusion of silicon and boron in thermally grown SiO2

Uematsu

Kageshima

Takahashi

et al. 2004

Applied Physics Letters

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Si self-diffusion and B diffusion in SiO2 were simultaneously investigated in thermally grown Si28O2 co-implanted with Si30 and B. The B diffusivity increases with decreasing distance between the implanted B and Si∕SiO2 interface, in the same way as Si self-diffusivity. This result together with a numerical simulation shows that SiO molecules, which are generated at the Si∕SiO2 interface and diffusing into SiO2, enhance not only Si self-diffusion, but also B diffusion. In addition, we found that the diffusivities of both Si and B increase with higher B concentration in SiO2. The experimental results can be quantitatively explained by a numerical simulation assuming that the diffusivity of SiO, which enhances the diffusivities of Si and B, increases with higher B concentration.

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Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Cited by 37 publications

References 10 publications

Atomic Processes at and near Silicon/Silicon Dioxide Interfaces

Atomic Processes at and near Silicon/Silicon Dioxide Interfaces

Structure and diffusion of boron in amorphous silica: Role of oxygen vacancy related defects

Correlated diffusion of silicon and boron in thermally grown SiO2

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