Diffusion of carbon in TiC1−y and ZrC1−y

Understanding the Irradiation Behavior of Zirconium Carbide

“…Here we assume that the vibrational entropy of defect formation ∆ is approximately zero, since defects will be produced by irradiation, thus ∆ will not be very critical. As shown in Table 5.2, in our calculation 0 = 2.23 × 10 −7 2 / , which is similar to that in a recent reference (Van Loo, 1989) but smaller than those in earlier references (Sarian, 1967;Andrievskii, 1971). The diffusion coefficients of point defects as functions of temperature are then obtained from …”

Thermal effect of TiC in the Mo/TiC/SiC system at elevated temperature

“…TiC thickness (m) k0 (cm 2 /s) Q (kcal/mol) [24,30,32,36]. These curves demonstrate that the intercalation of a TiC layer always induces a significant reduction of the kinetics.…”

“…At first sight, this reaction can be considered as an interesting fact because it ensures the adherence of the TiC layer on the metal. Despite the absence of data about the diffusion kinetics of Si into TiC in literature, some considerations are given by Van Loo et al and Schmid and Roth about the diffusion of C atoms into TiC [30,31] respectively. Other authors considered the diffusion of C or Si atoms into Mo-based systems [32][33][34][35][36].…”

Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors

“…One would expect that C atoms will move more easily through a layer with more vacancies, which may explain the lower activation energy. Many authors 40,41 pose that the activation energy for diffusion is independent of the composition. Others 30,32,42 have shown that different carbon diffusion mechanisms are active, and the dominance of a particular mechanism is dependent on the composition and on the temperature range.…”