Diffusion of gallium in silicon

Haridoss, S.; Bénière, F.; Gauneau, M.; Rupert, A.

doi:10.1063/1.327541

Cited by 36 publications

(12 citation statements)

References 16 publications

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“…We assume that this better damage recovery of the Si and Ge implants is because of unlimited solid solubility of Si and Ge species and limited solid solubility of Ga species at the annealing temperatures used in the present study. Solubility limits of Ga in Si at 800 and 900°C are 3.1 9 10 18 cm -3 and 6.4 9 10 18 cm -3 respectively [18]. These limits, after taking into account the depth (mean ion range plus twice the longitudinal straggle) within which 95.4 % of Ga ions in the as-implanted state would exist, can be converted to areal fluences 1.6 9 10 13 cm -2 and 3.2 9 10 13 Ga cm -2 .…”

Section: Discussionmentioning

confidence: 98%

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Balasubramanian

Hull

2015

J Mater Sci: Mater Electron

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Focused ion beam (FIB) techniques have previously been shown to have applications in templating semiconductor nanostructure growth on Si. To assess crystalline quality in this method, or in other FIB-based nano-fabrication methods in Si, we assess in this work FIBimplantation damage in Si and subsequent recovery by annealing. Specifically, we study Si substrates implanted to 1 9 10 12 -5 9 10 15 ions cm -2 fluences of 30 kV Si 2? , Ge 2? and Ga ? incident normally at room temperature, covering a structural damage regime from almost no damage to amorphization. Raman spectroscopy with incident photons of wavelength 405 and 514 nm were used for probing structural damage in different depths in as-implanted and thermally annealed substrates. Annealing was performed for varying times at 730-900°C in ultra-high purity nitrogen ambient. Structural damage quantification was performed through measurements of peak height and position of the crystalline Si peak at 520 cm -1 . Our analysis shows that a structural damage parameter, D, (defined by subtracting from unity, the ratio of the height of the Si Raman peak in implanted/annealed samples to that for the Si peak in an unimplanted standard, such that D = 0.00 and D = 1.00 correspond to pristine single crystal and amorphous Si respectively) is 0.05 or less in all the Si and Ge implants after annealing to 900°C, 1800 s. However, D for the Ga implants is close to zero for Ga fluences up to 3 9 10 13 cm -2 but increases steadily to 0.19 for 5 9 10 15 Ga cm -2 under these annealing conditions. The underlying damage recovery mechanisms are discussed.

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Section: Discussionmentioning

confidence: 98%

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Balasubramanian

Hull

2015

J Mater Sci: Mater Electron

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“…Gallium was used at the beginning of the semiconductor industry for making alloy junctions, because of its high diffusion coefficient and low eutectic temperature [ 90 ]. However, the use of gallium is limited, because of its high diffusivity in SiO 2 , which is commonly used for layer masking [ 190 ]. The diffusion of gallium in silicon was first investigated by Fuller and Ditzenberger [ 179 ] who described the diffusion coefficient of gallium in the 1105–1360 °C temperature range as

.…”

Section: Phase Diagramsmentioning

confidence: 99%

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Mostafa

Medraj

2017

Materials

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Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.

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“…In this context, it may be noted that Si can also diffuses into Si. [30][31][32] However, the diffusion constant 31 is estimated to be ∼10 −21 cm 2 /sec at 450 C which indicates that the diffusion of Si into Ga is negligible at the lowest temperature used for the nanohole formation. Though high temperature enhances the solubility 26 of Si in Ga droplet along with the rate of evaporation, Ga droplet coalescence to yield non-uniform droplets and hence, non-uniform holes as evident from Figure 3(c).…”

Section: Resultsmentioning

confidence: 97%

Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface

Sugavaneshwar¹,

Nagao²

2012

Mat Express

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We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in gallium by local droplet etching. Nanometer-sized gallium droplets yield nanoholes when annealed in ultrahigh vacuum at moderate temperatures (∼500 C) without affecting the other regions. High vacuum and moderate annealing temperatures are key parameters to obtain well-defined nanoholes with diameter comparable to that of Ga droplets. Selfassembly of Ga droplet leads to a nanohole density of 4-8 × 10 10 /cm 2 .

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Diffusion of gallium in silicon

Cited by 36 publications

References 16 publications

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Damage recovery of FIB modified Si for directed-assembly of semiconductor nanostructures

Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

Fabrication of Highly Dense Nanoholes by Self-Assembled Gallium Droplet on Silicon Surface

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