Diffusion of impurities from implanted silicon layers by rapid thermal annealing

Александров, О. В.; Kozlovskii, V. V.; Попов, В. В.; Samorukov, B. E.

doi:10.1002/pssa.2211100243

Cited by 14 publications

(3 citation statements)

References 9 publications

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“…From this generic model, numerous other effects can be derived like the ones of [39][40][41] as well as familiar Fick's law that would follow as a special case for timely and spatially constant parameters = 0 and = 0 . The diffusion constant would yield here 0 = 2 0 0 .…”

Section: Non-fickian Migration Of Dopants In Solidsmentioning

confidence: 99%

A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Gerlach

Maser²

2016

Advances in Condensed Matter Physics

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Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication because it allows creating electrically insulating areas which enclose electrically conductive devices and device areas, respectively. Deal and Grove developed the first model (DG-model) for the thermal oxidation of silicon describing the oxide thickness versus oxidation time relationship with very good agreement for oxide thicknesses of more than 23 nm. Their approach named as general relationship is the basis of many similar investigations. However, measurement results show that the DG-model does not apply to very thin oxides in the range of a few nm. Additionally, it is inherently not self-consistent. The aim of this paper is to develop a self-consistent model that is based on the continuity equation instead of Fick’s law as the DG-model is. As literature data show, the relationship between silicon oxide thickness and oxidation time is governed—down to oxide thicknesses of just a few nm—by a power-of-time law. Given by the time-independent surface concentration of oxidants at the oxide surface, Fickian diffusion seems to be neglectable for oxidant migration. The oxidant flux has been revealed to be carried by non-Fickian flux processes depending on sites being able to lodge dopants (oxidants), the so-called DOCC-sites, as well as on the dopant jump rate.

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Section: Non-fickian Migration Of Dopants In Solidsmentioning

confidence: 99%

A Self-Consistent Model for Thermal Oxidation of Silicon at Low Oxide Thickness

Gerlach

Maser²

2016

Advances in Condensed Matter Physics

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“…In an alternative approach to pair diffusion, often called "non-Fickian" diffusion, correlation effects and pair binding were ignored. These models then predict that a flux of vacancies results in a flux of impurity atoms in the opposite direction (see, e.g., Aleksandrov et al, 1988;Kozlovskii et al, 1985;Maser, 1991). Experimentally, the best test case is antimony since this element is known to diffuse nearly exclusively via vacancies.…”

Section: Basic Diffusion Mechanismsmentioning

confidence: 96%

Role of Defects in the Dopant Diffusion in Si

Pichler

2015

Semiconductors and Semimetals

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“…Equation (1.4) has been derived before (see K urata et at. 1973) and used to model the diffusion of impurities in silicon (see, for example, Morikawa et 1980;Gornushkina et al 1982;Aleksandrov et al 1988; a related reference is Protsenko & Chaikovskii 1986). In particular, it is possible to model the diffusion of an impurity uphill against its concentration gradient under certain circumstances using (1.4).…”

Section: C(t+a£~g{t) = J^{ [ C U T ) + C I+m V T(')-c M V U T ) + V(+m } -(I-2)mentioning

confidence: 99%