Diffusion of interstitial admixture in solids due to standing ultrasound wave

Arakelyan, V. S.; Avakyan, A. A.

doi:10.1002/pssa.2210800163

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…In figure 4, the number of displaced Si and B atoms (N d ) is shown for 50 keV B + -implanted Si wafers without (curve 1) and with UST (curves 2, 3). N d was determined by measuring the area under the channelling peaks in the RBS spectra [11]. All three curves represent the asimplanted case.…”

Section: Resultsmentioning

confidence: 99%

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Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Romanyuk¹,

Melnik²,

Olikh³

et al. 2001

Semicond. Sci. Technol.

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We report the first study of the effect of in situ ultrasound treatment (UST) during ion implantation on amorphization of crystalline silicon. Rutherford backscattering spectroscopy, ion channelling and cross-section transmission electron microscopy measurements show that amorphization of Si during Ar ion implantation is enhanced by UST, especially at ultrasound frequencies around 2 MHz. The influence on the amorphization process depends mainly on ion flux, ion masses and ultrasound frequency. For implantation conditions without amorphization, for example in the case of implantation with light atoms such as boron, defect concentrations are lower for wafers implanted with UST compared to reference wafers implanted without UST. The influence of ultrasound is discussed in terms of its interaction with point defects and ultrasound-stimulated enhanced diffusion of interstitials.

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Section: Resultsmentioning

confidence: 99%

“…Absorption of phonons generated by the ultrasound wave with frequencies in the range 0.6-7 MHz by the lattice will lead to a small lowering of the activation energy for diffusion [11]. However, the lowfrequency ultrasound wave can also excite high-frequency phonons as a result of nonlinear processes.…”

Section: Discussionmentioning

confidence: 99%

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Romanyuk¹,

Melnik²,

Olikh³

et al. 2001

Semicond. Sci. Technol.

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Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon

Krüger

Romanyuk

Melnik

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We report the first study of the effect of in situ ultrasound treatment during ion implantation on amorphization and transient enhanced diffusion (TED) in silicon. Rutherford backscattering spectroscopy, ion channeling, and Raman spectroscopy measurements show that amorphization of Si during Ar ion implantation is increased by ultrasound treatment, especially at ultrasound frequencies around 2 MHz. By secondary ion mass spectroscopy we investigate the influence of ultrasound treatment on TED of B atoms. Our data show that TED is reduced due to the influence of ultrasound treatment. The results are discussed in terms of the interaction of ultrasound waves with point defects and the ultrasound stimulated enhanced diffusion of interstitials.

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Diffusion of interstitial admixture in solids due to standing ultrasound wave

Cited by 2 publications

References 4 publications

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Modification of the Si amorphization process byin situultrasonic treatment during ion implantation

Influence of in situ ultrasound treatment during ion implantation on amorphization and junction formation in silicon

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