Diffusion of nitrogen in gallium arsenide

Stolwijk, N. A.; Bösker, G.; Andersson, T. G.; Södervall, U.

doi:10.1016/j.physb.2003.09.079

Cited by 9 publications

(17 citation statements)

References 11 publications

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“…The calculations of such an effect for the pairdiffusion mechanism in silicon were performed in [21] ("impurity atom-vacancy" pairs) and in [22,23] ("impurity atom-self-interstitial" pairs). Similar calculations for the kick-out mechanism during diffusion of different impurities in compound semiconductors were performed in [10,14,19,20,24]. All these calculations showed similar results, i.e.…”

Section: Wwwpss-bcomsupporting

confidence: 53%

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Saad

Fedotov

Velichko

et al. 2006

Physica Status Solidi (b)

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A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick‐out mechanism or due to formation, migration, and dissociation of the pairs “beryllium atom–group III self‐interstitial” is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self‐interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to “uphill” diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of “uphill” diffusion could be related to the nonuniform distribution of group III self‐interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a semiconductor. The calculated dopant profile agreed well with the experimental one and a comparison with the experimental data resulted in obtaining the values of beryllium diffusivity and other parameters describing Be diffusion in InGaAs. Further improvements of the model are also discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Wwwpss-bcomsupporting

confidence: 53%

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Saad

Fedotov

Velichko

et al. 2006

Physica Status Solidi (b)

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“…It is supposed that the kick-out mechanism is also responsible for the diffusion of gold in silicon [7,8]; zinc [9][10][11][12][13][14][15][16], nitrogen [17][18][19], magnesium [20][21][22], and beryllium [11,14,20,23] in GaAs. As follows from the data of investigations [14,24,25], beryllium diffusion in other compound semiconductors is governed by the kick-out mechanism too.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…A number of diffusion equations were proposed [1,4,7,10,11,13,14,16,19,22,23,24,25,26] to describe migration of interstitial impurity atoms. The equations used in [4,7,10,19] do not take into account the electric field effect on the migration of interstitial impurity atoms and can be used only for modeling of the diffusion of neutral interstitial species. The influence of built-in electric field on the drift of charged impurity interstitials is taken into consideration in [1,11,14,16,24,25], but diffusion equations were obtained only for the case of a single charge state of impurity interstitials.…”

Section: Introductionmentioning

confidence: 99%

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Macroscopic description of the diffusion of interstitial impurity atoms considering the influence of elastic stress on the drift of interstitial species

Velichko

2008

Philosophical Magazine

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The diffusion equation for non-equilibrium interstitial impurity atoms taking into account their charge states and drift of all mobile interstitial species in the built-in electric field and in the field of elastic stress is obtained. The obtained generalized equation is equivalent to the set of diffusion equations written for the interstitial impurity atoms in each individual charge state. Due to a number of characteristic features the generalized equation is more convenient for numerical solution than the original system of separate diffusion equations. On this basis, the macroscopic description of stress-mediated impurity diffusion due to a kick-out mechanism is obtained. It is supposed that the interstitial impurity atom makes a number of jumps before conversion to the substitutional position. At the same time, local equilibrium prevails between substitutionally dissolved impurity atoms, non-equilibrium self-interstitials, and interstitial impurity atoms. Also, the derived equation for impurity diffusion due to the kick-out mechanism takes into account all charge states of interstitial impurity atoms as well as drift of interstitial species in the electric field and in the field of elastic stress. Moreover, this equation exactly matches the equation of stress-mediated impurity diffusion due to the generation, migration, and dissociation of the equilibrium 'impurity atom-self-interstitial' pairs.

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“…During the growth interruption, we assume that N atoms do not diffuse into the bulk material, because of the low diffusivity of N in GaAs [28]. Combining Eqs.…”

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confidence: 99%