The purpose of this work is to study the features of the electrical properties of bounded semiconductors, as well as the effect of the inhomogeneous distribution of impurities in anisotropic semiconductors on the structure of electric fields with standard methods of contact measurements.Diffusion and ion-doped semiconductor structures, as well as composite structures with misalignment of film and substrate lattices, are currently a promising class of materials in micro- and nanoelectronics. The introduction of an impurity into a semiconductor crystal sample changes its electrical properties, which makes it possible to reduce the size of individual components of the chip, while maintaining or increasing their power.Methods. The results of the work are based on the known dependences of the distributions of impurities during diffusion alloying. To calculate the potential distribution, the Fourier method was used, which made it possible to solve the Poisson Equation with Neumann boundary conditions without approximations. The mathematical package MathCad was used to analyze the obtained expressions characterizing electric fields in inhomogeneous semiconductors.Results. A technique for solving the boundary value problem for the potential in bounded diffusion semiconductors is presented. Expressions in the form of series of analytical functions for the distribution of electric potential in conducting anisotropic structures are presented. The constructed models make it possible to determine and qualitatively describe the distributions of electric fields during probe measurements and to investigate their structure in diffusion semiconductors. Conclusion. On the basis of computer modeling, the importance of taking into account the parameters of inhomogeneity of conductivity is shown. The effect of concentration of current density lines in diffusion semiconductors is shown and quantified.
