Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

Abstract

Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface was studied. After diffusion, the silicon samples were examined by the Van der Pauw method, and a scanning electron microscope was used to determine the concentration distribution of phosphorus and gallium atoms impurity. Keywords: diffusion, gallium phosphide, silicon, solubility, concentration, binary complexes.