Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes

Kukurudziak, M. S.

doi:10.15407/spqeo25.04.385

Cited by 9 publications

(7 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2, 3). In [11] and [13], we found that the optimal values of the surface resistance of phosphorus and boron are R S = 2.7 Ω/□ and R S = 18 Ω/□, respectively. We present the calculations of the charge collection coefficient at these values.…”

Section: Calculationsmentioning

confidence: 93%

See 1 more Smart Citation

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Kukurudziak,

Maistruk

2024

East Eur. J. Phys.

View full text Add to dashboard Cite

The paper investigates the collection coefficient of minority charge carriers in silicon p-i-n photodiodes and the influence of certain technological factors on it. It has been found that the diffusion length of minority charge carriers and the resistivity of the material have a significant effect on the value of the collection coefficient, since the collection area of photogenerated charge carriers increases with increasing these parameters. It was also found that an effective method to increase the collection coefficient of photodiodes is to ensure that the thickness of the high-resistance region of the photodiode is equal to the sum of the diffusion length of minority charge carriers and the width of the space charge region. The effect of the concentration of dopants on the responsivity and collection coefficient is investigated. It was found that, in contrast to the calculated data, in which the collection coefficient increases with decreasing concentrations of phosphorus and boron, in the experimental data, with decreasing concentrations of impurities, the responsivity and, accordingly, the collection coefficient decrease due to a decrease in the degree of heterogenization and, as a result, a decrease in the width of the space charge region and the diffusion length of minority charge carriers.

show abstract

Section: Calculationsmentioning

confidence: 93%

“…The samples were made by diffusion-planar technology according to the technological regimes given in [11]. The thickness of the crystals reached X ≈ 500-510 μm.…”

Section: Methodsmentioning

confidence: 99%

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Kukurudziak,

Maistruk

2024

East Eur. J. Phys.

View full text Add to dashboard Cite

show abstract

“…It was decided to investigate the influence of the isolation methods of REs based on silicon four-element p-i-n PDs with a guard ring. Production was carried out using diffusion-planar technology according to the technological modes of diffusion processes given in [15]. The starting material was single-crystal dislocation-free p-type silicon with orientation [111], ρ≈17-20 kΩ•cm.…”

Section: Methodsmentioning

confidence: 99%

Isolation of Responsive Elements of Planar Multi-Element Photodiodes

Kukurudziak

2023

East Eur. J. Phys.

View full text Add to dashboard Cite

In the mass production of multi-element silicon p-i-n photodiodes, the problem of systematic rejection of products due to a decrease in the insulation resistance between the active elements of photodetectors has been revealed. The purpose of this work is to study the causes of insulation resistance degradation and to establish optimal methods for avoiding this phenomenon. A comparative analysis of three insulation methods was carried out: classical insulation by the surface of a non-conductive substrate and a dielectric layer; insulation by means of mesaprofile grooves with a dielectric film; insulation by means of areas of limitation of surface leakage channels isotypic with the substrate material (in this case, p+-type) formed in the gaps between active elements. The study found that the reason for the deterioration of the insulation resistance between the active elements of photodiodes is the presence of conductive inversion channels at the Si-SiO2 interface due to the use of silicon with high resistivity. One mechanism for the formation of inversion channels is the redistribution of impurities in the masking oxide (in particular, phosphorus) and their diffusion to the interface during thermal operations. Another mechanism for the formation of inversion layers is the diffusion of boron from silicon into SiO2 during heat treatment due to the fact that the boron segregation coefficient is less than one. In the manufacture of samples with insulation using non-conductive areas of the substrate, a decrease in insulation resistance was observed as the technological route was performed (after each subsequent operation, the resistance degraded). The degree of degradation can be reduced by reducing the duration of thermal operations. It has been shown that reducing the thickness of the masking oxide causes a decrease in insulation resistance. When using mesa-technology, it is possible to increase the insulation resistance by eliminating the high-temperature oxidation operation and, in fact, due to the absence of a masking coating during phosphorus deposition. Insulation by means of p+-type areas in the gaps between the active elements allows to obtain the highest insulation resistance values. The formation of these regions with a width of 100 μm in the gaps with a width of 200 μm allowed us to obtain an insulation resistance of 25-30 MΩ. To ensure the insulation of the active elements of photodiodes by this method, two thermal operations are added to the technological route. The number of thermal operations can be reduced by doping the entire silicon surface with a low boron concentration before forming a masking coating.

show abstract

“…The PD-E technological route consisted of a complex of two thermal operations and three photolithographies: one-stage diffusion of phosphorus in an oxidizing medium was carried out according to the regimes given in [9], during which an n + -layer was formed on both sides of the substrate covered with a SiO 2 film (Fig. 2-b1); further, after chemical dynamic polishing (CDP) of the reverse side of substrate, boron diffusion in the same side to create a p + -type ohmic contact (Fig.…”

Section: Methodsmentioning

confidence: 99%

“…The difference in responsivity can be explained by the difference in the life time of minor charge carriers, since responsivity is directly proportional to τ (Eq. ( 1)) [9]. Although the PDs were made of the same silicon, but in the case of PD-E, the degree of degradation of τ during the manufacturing process is smaller due to the reduction in the number of thermal operations…”

Section: Methodsmentioning

confidence: 99%

Технологія кремнієвих p-i-n фотодіодів зі зменшеною кількістю термічних операцій

Kukurudziak

2023

SISIOT

View full text Add to dashboard Cite

The main parameters of the p-i-n photodiodes (PD) are responsivity, dark current and capacity of responsive elements (RE). To ensure the maximum values of the specified parameters, it is necessary to use defect-free silicon with the maximum values of resistivity and life time of minor charge carriers. These characteristics of the starting material degrade during high-temperature thermal operations. Therefore, it is worth using a technology that allows you to avoid the degradation of silicon characteristics. This can be implemented by reducing the temperature of diffusion and oxidation operations, as well as by reducing the number of actual thermal operations. The samples were made according to two versions of the technology: diffusion-planar using two-stage diffusion of phosphorus from planar sources, and mesotechnology using one-stage diffusion of phosphorus using liquid PCl3 diffusant. After manufacturing, the PD parameters were compared. The use of mesotechnology with one-stage diffusion of phosphorus made it possible to reduce the number of thermal operations by two times compared to serial technology. The experimental samples had a pulse responsivity at a wavelength of 1.064 μm of 0.47-0.50 A/W, and the serial ones had a responsivity of 0.45-0.48 A/W. The difference in responsivity is caused by the difference in the life time of minor charge carriers, since in the case of the proposed technology, the degree of degradation of the life time of minor charge carriers during the manufacturing process is smaller. After selective etching, it was seen that when using a liquid diffusant, the density of dislocations on the crystal surface is much higher than when using planar sources of phosphorus. Due to the higher density of dislocations, the experimental samples had higher dark currents, but when using a low bias voltage, the difference in dark currents is insignificant. The RE capacity of the experimental samples was slightly lower than that of the serial ones. This can be explained by the difference in the resistivity of the i-region of the final crystals.

show abstract

Diffusion of phosphorus in technology for manufacturing silicon p-i-n photodiodes

Cited by 9 publications

References 13 publications

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Study of the Charge Carrier Collection Coefficient of Silicon p-i-n Photodiodes

Isolation of Responsive Elements of Planar Multi-Element Photodiodes

Технологія кремнієвих p-i-n фотодіодів зі зменшеною кількістю термічних операцій

Contact Info

Product

Resources

About