Diffusion Phenomena in Silicon

Rupprecht, Hans–Albert

doi:10.1007/978-94-011-7583-8_3

Cited by 1 publication

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“…The dopant flux across the Si-SiO, interface can also be modelled. If during a time interval At a quantity of apsioZAt dopant per surface units in the oxide exchanges with an amount of bpsiAt dopant pro surface units in the silicon at the given temperature, then in case of equilibrium apsio, At = bpsiAt (33) from which the equilibrium segregation coefficient is and in case of no equilibrium the interfacial dopant flux is if a linearly graded oxygen concentration is supported in the oxide. Extra problems arise in the simulation because of the dopant concentration changes during oxidation:…”

Section: Si-sio Interfacementioning

confidence: 99%

Modelling of Semiconductor Structures and Devices

Tarnay¹

1981

Phys. Scr.

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The physical modelling is based on the solving of partial differential equations. Analytical solutions are only possible by extreme simplifications, for more accurate results numerical methods must be used. One way of the possible numerical solving is the discretization based upon mathematical considerations. Another way is when the discretization is based on physical considerations after Linvill's basic idea: the regional approximation. The advantages and difficulties of the regional approximation by using circuit models are mentioned.The process modelling is applied for the simulation of different processes of semiconductor structure fabrication, like diffusion, oxidation and ion implantation etc. This problem also leads to the solving of coupled partial differential equations, where the difficulties are due to the interactions between the diffusion transports of the dopants, to the vacancies, to the field strength of the ionized dopants, andin case of oxidationto the moving SiSiO, interface and to the change in the dimensions of the structure. Examples are given for the anomalous phosphorus diffusion and some new results are shown related to the ion implantation.

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Section: Si-sio Interfacementioning

confidence: 99%

Modelling of Semiconductor Structures and Devices

Tarnay¹

1981

Phys. Scr.

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Diffusion Phenomena in Silicon

Cited by 1 publication

References 10 publications

Modelling of Semiconductor Structures and Devices

Modelling of Semiconductor Structures and Devices

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