Diffusion thermoelectric power of bismuth in non-quantising magnetic fields. Pseudo-parabolic model

Mikhail, I F I; Hansen, Ole; Nielsen, Hans Bruun

doi:10.1088/0022-3719/13/9/016

Cited by 28 publications

(22 citation statements)

References 21 publications

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“…Earlier work was devoted to transport measurements of these materials properties in bulk and polycrystals. [7][8][9] More contemporary experimental and theoretical efforts have been directed toward enhancing ZT in Bi nanostructures, such as nanowires and films. 10,11 It has also been shown that externally applied magnetic fields can significantly enhance the Seebeck coefficient, suggesting a different path for improving ZT .…”

Section: Introductionmentioning

confidence: 99%

Magnetic field and nanostructuring effects on the thermoelectric performance of bismuth

2012

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Pathways for enhancing the thermoelectric performance of bismuth at low temperatures are explored. These include applying an external magnetic field and nanostructuring. We present a theory describing the anisotropic thermoelectric properties of bismuth in terms of carrier effective masses, scattering, and band-structure characteristics obtained from experiment. It is found that the magnetic field or nanostructuring, when applied separately, can lead to significant improvements in the thermoelectric figure of merit. However, despite their beneficial yet different effects on the transport, it is shown that applying simultaneously a magnetic field and nanostructuring is not a feasible way of improving the thermoelectric performance of bismuth.

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Section: Introductionmentioning

confidence: 99%

Magnetic field and nanostructuring effects on the thermoelectric performance of bismuth

2012

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“…Calculations of resistivity and MR in non-quantizing magnetic field region were based on the polycrystalline film model making use of the crystallite resistivity tensor ρ elements obtained from mobility-field product calculations [10]. Typical mobility values of Bi at liquid nitrogen temperature for electrons in the vicinity of L points are µ 1 = 59, µ 2 = 1.12, µ 3 = 32.7, µ 4 = −3.8, and for T -holes they are ν 1 = ν 2 = 9.38, ν 3 ≈ 5ν 2 in units of 10 4 cm 2 V −1 s −1 [16]. Here the subscripts 1, 2, and 3 label binary, bisectric, and trigonal axis, respectively.…”

Section: Resistivity Of Uniaxially Deformed Polycrystallinementioning

confidence: 99%

Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Tolutis¹

2009

Lithuanian J. Phys.

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Large influence of uniaxial stretch (strain) S and compression P on transverse and perpendicular resistivity ρ and magnetoresistance (MR) of polycrystalline n-Bi films was investigated. The calculations were performed on the basis of polycrystalline Bi thin film model and electron intervalley repopulation in deformed film crystallites. The calculations show that in n-Bi films the influence of P on ρ can be many times larger because T -holes in Bi films significantly reduce the effect of deformation. It was found that S and P cause considerably different dependences of ρ and MR on magnetic field strength. The effect of P on the ρ and MR is of opposite sign as compared to S and can be larger than that of S. In strong non-quantizing magnetic field region the transverse ρ appears to be independent of deformation. The investigated high-quality 1.5 µm thick Bi films consisting of up to 200 µm length crystallites were deposited on non-crystalline substrate and annealed at critical temperature close to the film melting temperature. The experimental results confirm the theoretical predictions.

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“…8. The values of mobility µ 1 = 59, µ 2 = 1.12, µ 3 = 32.7, µ 4 = −3.8 (in units of 10 4 cm 2 V −1 s −1 ) for electrons in the vicinity of L-points of Bi at liquid nitrogen temperature and electron concentration 3n = 5.24·10 17 cm −3 were used [14]. Here the labels 1, 2, and 3 mark the binary axis, bisectric axis, and trigonal axis, respectively.…”

Section: Longitudinal Resistivity Of Deformed Polycrystalline N-bi Filmsmentioning

confidence: 99%

Longitudinal magnetoresistance of uniaxially deformed thin polycrystalline Bi films

Tolutis¹

2006

Lithuanian J. Phys.

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The large longitudinal magnetoresistance (MR) of high quality uniaxially deformed 1.5 µm thick polycrystalline bismuth films deposited in vacuum on non-crystalline substrate and annealed at critical temperatures was investigated. The experimental results are interpreted on the basis of polycrystalline Bi thin film model. The data suggest that in tellurium doped Bi films the influence of uniaxial deformation on MR can be up to 400%. It was found that strain and compression cause a considerably different dependence of MR on magnetic field, which is explained in terms of electron intervalley repopulation in polycrystalline film crystallites.

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Diffusion thermoelectric power of bismuth in non-quantising magnetic fields. Pseudo-parabolic model

Cited by 28 publications

References 21 publications

Magnetic field and nanostructuring effects on the thermoelectric performance of bismuth

Magnetic field and nanostructuring effects on the thermoelectric performance of bismuth

Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Longitudinal magnetoresistance of uniaxially deformed thin polycrystalline Bi films

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