Diffusivity of oxygen in Czochralski silicon at 400–750 °C

Takeno, Hiroshi; Hayamizu, Yoshinori; Miki, Katsuhiko

doi:10.1063/1.368509

Cited by 36 publications

(22 citation statements)

References 17 publications

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“…The BF and DF images taken under two beam condition for (004) show pronounced strain contrast making it difficult to unambiguously determine the shape of the precipitate. In contrast, the images taken under two beam condition for (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) clearly reveal that the precipitate has a plate-like character and lies on the (001) plane. From the smallest width of the contrast, the thickness of the precipitates can be roughly estimated.…”

Section: Tem Investigationsmentioning

confidence: 80%

“…However, the normal diffusivity 8 becomes enhanced at temperatures below 750 C, [9][10][11][12] which influences both the nucleation and the growth kinetics in this temperature regime. While it is widely accepted, that fast diffusing O dimers cause this enhanced O diffusion, literature data show a wide spread of diffusion constants up to several orders of magnitude.…”

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confidence: 99%

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Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

Will

Gröschel

Bergmann

et al. 2014

Journal of Applied Physics

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X-ray Pendellösung fringes from three silicon single crystals measured at 900 °C are analyzed with respect to density and size of oxygen precipitates within a diffusion-driven growth model and compared with TEM investigations. It appears that boron doped (p+) material shows a higher precipitate density and a higher strain than moderately (p-) boron crystals. In-situ diffraction reveals a diffusion-driven precipitate growth followed by a second growth regime in both materials. An interpretation of the second growth regime in terms of Ostwald ripening yields surface energy values (around 70 erg/cm2) similar to published data. Further, an increased nucleation rate by a factor of ∼13 is found in the p+ sample as compared to a p- sample at a nucleation temperature of 450 °C.

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Section: Tem Investigationsmentioning

confidence: 80%

mentioning

confidence: 99%

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

Will

Gröschel

Bergmann

et al. 2014

Journal of Applied Physics

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“…1 The mechanism and kinetics of the TDD formation are not well understood. 1,[10][11][12] The main reason is that the kinetics of the TDD formation cannot be explained with the normal O i diffusivity because it is too low ͑the activation energy of 2.5 eV is too high͒ to explain the observed fast TDD formation occuring with a low activation energy of 1.7 eV. [13][14][15][16] Several models have been suggested when trying to relate the clustering of oxygen to the formation kinetics of TDD's.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

et al. 2002

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Migration, restructuring, and dissociation energies of oxygen complexes in silicon are studied theoretically through density-functional total-energy calculations. We find that the stablest oxygen complexes are straight chains that also have the lowest migration energies. The calculated migration energies decrease from 2.3 eV for an interstitial oxygen atom (O i ) to low values of 0.4 -1.6 eV for O 2 -O 9 chains and 1.9-2.2 eV for longer chains. The oxygen chains ͑which are thermal double donors͒ are expected to grow so that the migrating oxygen chains capture less-mobile but abundant O i 's: O n ϩO i →O nϩ1 . Restructuring energies of chains with a side O i into straight oxygen chains are 1.9-2.5 eV. Restructuring gives an essential contribution to the fast diffusion. We find that the shorter O 2 -O 9 chains dissociate primarily by ejecting one of the outermost oxygen atoms.

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“…The calculated oxygen diffusivities of the two oxygen species are also listed in reports [35][36][37][38][39][40]. Moreover, according to Eq.…”

Section: Oxygen Diffusion In Cz-si 12x Ge X and Cz-simentioning

confidence: 99%

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Dong

Zhao

et al. 2015

J Mater Sci: Mater Electron

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Rapid thermal processing (RTP) induced vacancy-oxygen (VO m m C 2) complexes can act as the precursors for oxide precipitate nucleation thus enhancing oxygen precipitation (OP) in Czochralski silicon (Cz-Si). In our preceding work, we have reported that 10 20 cm -3 germanium (Ge)-doping in Cz-Si facilitates the formation of VO m complexes during the high temperature RTP. Then, how the even higher Ge-doping at 10 21 cm -3 in Cz-Si affects the formation of VO m complexes during the RTP is an interesting issue to be addressed. Actually, such high Ge-doping in Cz-Si forms Cz-Si 1-x Ge x alloys. In the present work, we have investigated the formation of VO m complexes in Cz-Si 1-x Ge x (x = 0.035-0.038) wafers subjected to the high temperature RTP. The Cz-Si 1-x Ge x wafers are found to exhibit much weaker OP than Cz-Si counterparts when subjected to the same two-step (nucleation-growth) anneal following the high temperature RTP, indicating that the formation of VO m complexes during the RTP is suppressed in Cz-Si

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Diffusivity of oxygen in Czochralski silicon at 400–750 °C

Cited by 36 publications

References 17 publications

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction

First-principles study of migration, restructuring, and dissociation energies of oxygen complexes in silicon

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

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