Digital counter cell design using carbon nanotube FETs

Bagherizadeh, Mehdi; Moaiyeri, Mohammad Hossein; Eshghi, Mohammad

doi:10.1016/j.jart.2016.12.005

Cited by 5 publications

(5 citation statements)

References 25 publications

(59 reference statements)

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“…Then the maximum delay is reported as the delay of the circuit. The power consumption is the average power consumption measured during a long time [8], [19]. Finally the power-delay product (PDP) which compromises between delay and power consumption is reported as a figure of merit.…”

Section: Results and Analysismentioning

confidence: 99%

“…The needs of scaling down the size of transistor in Nano ranges in current MOSFET technology leads to some challenges such as reliability, power consumption, less control of the gate, leakage power and high lithography costs [7]- [9]. Hence, to overcome these difficulties of nanoscale MOSFETs, new technologies such as Single-Electron Transistor (SET), Quantum-Dot Cellular Automata, and Carbon Nanotube Field Effect Transistor (CNTFET) have been studied in many literatures [8]. Among these technologies CNTFET seems to be the most feasible promising successor due to its remarkable features and its similarities with MOSFET technology [8], [10].…”

Section: Introductionmentioning

confidence: 99%

“…Hence, to overcome these difficulties of nanoscale MOSFETs, new technologies such as Single-Electron Transistor (SET), Quantum-Dot Cellular Automata, and Carbon Nanotube Field Effect Transistor (CNTFET) have been studied in many literatures [8]. Among these technologies CNTFET seems to be the most feasible promising successor due to its remarkable features and its similarities with MOSFET technology [8], [10]. CNTFET technology benefit from ballistic operation and one dimensional band structure, and low OFF-current and the same mobility for both n-type CNTFET and ptype CNTFET.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Designing a Novel High Performance Four-to-Two Compressor Cell Based on CNTFET Technology for Low Voltages

Bagherizadeh

Moradi

Torabi

2018

IJECE

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<p>Compressor cell is often placed in critical path of multiplier circuits to perform partial product summation. Therefore it plays a significant role in determining the entire performance of multiplier and digital system. Respecting to the necessity of low power design for portable electronic, designing a low power and high performance compressors seems to be a good solution to overcome of these problems for computations. In this paper a novel high performance four-to-two compressor cell is proposed using Carbon Nanotube Field Effect Transistors (CNTFETs) technology. The new cell is based on Majority Function, NOR, and NAND gates. The main advantage of proposed design in comparison with former cells is the ease of obtaining CARRY output by means of Majority function. Simulations have been done with 32nm technology node using Synopsys HSPICE software. Simulation results confirm the priority of the proposed cell compared to other state-of-the-art four-to-two compressor cells.</p>

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Section: Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Designing a Novel High Performance Four-to-Two Compressor Cell Based on CNTFET Technology for Low Voltages

Bagherizadeh

Moradi

Torabi

2018

IJECE

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“…The adoption of emerging technology like CNTFET has also been employed to minimize device size without sacrificing performance. Numerous digital circuits can be designed using CNFETs by employing different threshold voltages [15]. Much like traditional MOSFETs, CNFETs function as voltagecontrolled devices, wherein the current within the channel-comprising one or more narrow CNTs-is governed by the applied gate voltage.…”

Section: Review Of Cntfet and Fgmos Technologymentioning

confidence: 99%

Variability aware ultra-low power design of NOR/NAND gate using non-conventional techniques

Sharma,

Jhamb

2024

Eng. Res. Express

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Fundamental to digital signal processing applications such as the Arithmetic Logic Unit (ALU), logic gates serve as the foundational components. This paper presents NOR and NAND gates engineered for operation within the ultra-low voltage (LV) and low power domains (LP). Utilizing the floating gate MOSFET (FGMOS) approach, this study adopts a strategy to enhance performance, focusing on reducing design complexity and minimizing power consumption.The proposed FGMOS-NAND/NOR gate design is investigated for important device parameters such as power (pwr), delay (tp), power delay product (PDP), and energy delay product (EDP). At 0.7 V supply, the overall power consumption of the FGMOS NOR and NAND gates is 0.442nW and 0.323nW, respectively. Further, carbon nanotube field effect transistor (CNTFET) technology is used to implement NOR and NAND gates in this research work. A rigorous comparative analysis was conducted in this research study to assess the performance of non-conventional technologies, specifically field-effect transistors with floating gate (FGMOS) and carbon nanotube field-effect transistors (CNFET), in comparison to the conventional complementary metal-oxide-semiconductor (CMOS) technology. Notably, our investigation revealed that when carbon nanotube field-effect transistor (CNTFET) technology is synergistically employed in conjunction with FGMOS technology, the overall circuit performance is significantly enhanced. Furthermore, in order to estimate the robustness and reliability of the proposed designs, comprehensive analysis pertaining to delay and power-delay product (PDP) variability were meticulously carried out within the scope of this research article.

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“…One of the remarkable characteristics of CNFET is that N-CNFET and P-CNFET, with the similar device geometries. These transistors have the same mobility and identical current drive capabilities, which is very important for transistor sizing in intricate circuits [6].…”

Section: Introductionmentioning

confidence: 99%

A New High-Performance Bridge Structure for 4- to-2 Compressor using CMOS and CNFET Technology

Darvishi¹,

Bagherizadeh²

2017

IJMECS

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Abstract-In this paper, a new high-speed and energy efficient 4-to-2 compressor cell was presented using carbon nanotube field effect transistors (CNFETs). CNFET is very suitable for high-frequency and lowvoltage applications. In addition, in this paper several conventional and state-of-the-art 4-to-2 compressor cells are surveyed and compared. In order to evaluate the proposed designs, computer simulations are carried out using 32nm-CMOS and 32nm-CNFET technologies. Simulations are conducted using various low voltage power supplies, different temperatures, frequencies and load capacitors. Results of simulation demonstrate predominance of the proposed design in terms of power consumption, delay, and power-delay product (PDP) compared to other 4-to-2 compressor cells and they confirm that the proposed design is the fastest 4-to-2 compressor in various working circumstances.

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Digital counter cell design using carbon nanotube FETs

Cited by 5 publications

References 25 publications

Designing a Novel High Performance Four-to-Two Compressor Cell Based on CNTFET Technology for Low Voltages

Designing a Novel High Performance Four-to-Two Compressor Cell Based on CNTFET Technology for Low Voltages

Variability aware ultra-low power design of NOR/NAND gate using non-conventional techniques

A New High-Performance Bridge Structure for 4- to-2 Compressor using CMOS and CNFET Technology

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