Digital Design as a Key Approach to Shortening MEMS Development Cycle

Androniс, Mihail M.; Rodionov, Ilya A.; Tsvetkov, Yurii B.

doi:10.1051/itmconf/20203501003

Cited by 2 publications

(3 citation statements)

References 5 publications

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“…Besides, NH 4 + ions passivate a negatively charged SiO 2 surface, preventing etching reaction by www.nature.com/scientificreports/ blocking deep penetration into SiO2. Another negative effect is a precipitation of reaction products (11,12) due to its limited solubility 48 .…”

Section: Resultsmentioning

confidence: 99%

“…The structural elements of these devices usually contain flexure membranes 5-50 µm thick 6,7 , microchannels 10-100 µm deep 8,9 , or through holes for the entire depth of the substrate from 150 to 1000 µm 10,11 . In addition, micro devices often combine these elements into multilevel microstructures 12 . It is critically important to ensure high quality processing of fused glass microdevice elements, since it determine the optical, rheological, and mechanical parameters of the structures.…”

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confidence: 99%

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Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Konstantinova

Andronic

et al. 2023

Sci Rep

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Fused silica glass is a material of choice for micromechanical, microfluidic, and optical devices due to its chemical resistance, optical, electrical, and mechanical performance. Wet etching is the key method for fabricating of such microdevices. Protective mask integrity is a big challenge due extremely aggressive properties of etching solution. Here, we propose multilevel microstructures fabrication route based on fused silica deep etching through a stepped mask. First, we provide an analysis of a fused silica dissolution mechanism in buffered oxide etching (BOE) solution and calculate the main fluoride fractions like $${HF}_{2}^{-}$$ HF 2 - , $${F}^{-}$$ F - , $${(HF)}_{2}$$ ( H F ) 2 as a function of pH and NH4F:HF ratio. Then, we experimentally investigate the influence of BOE composition (1:1–14:1) on the mask resistance, etch rate and profile isotropy during deep etching through a metal/photoresist mask. Finally, we demonstrate a high-quality multilevel over-200 μm etching process with the rate up to 3 μm/min, which could be of a great interest for advanced microdevices with flexure suspensions, inertial masses, microchannels, and through-wafer holes.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Konstantinova

Andronic

et al. 2023

Sci Rep

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“…Micro-electro-mechanical systems (MEMS) are versatile microdevices that are widely used in many areas of human life from scientific research to industry [1][2][3]. Silicon microtechnology based on microelectronic techniques [4] is the key mass production fabrication method for creating microsystems. Compared to planar integrated circuits, MEMS 3D devices are always characterized by unique design (structures size and shape), individual materials stack, and device-friendly fabrication technology.…”

Section: Introductionmentioning

confidence: 99%

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

Andronic

Sorokina

et al. 2021

Micromachines

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Advanced microsystems widely used in integrated optoelectronic devices, energy harvesting components, and microfluidic lab-on-chips require high-aspect silicon microstructures with a precisely controlled profile. Such microstructures can be fabricated using the Bosch process, which is a key process for the mass production of micro-electro-mechanical systems (MEMS) devices. One can measure the etching profile at a cross-section to characterize the Bosch process quality by cleaving the substrate into two pieces. However, the cleaving process of several neighboring deeply etched microstructures is a very challenging and uncontrollable task. The cleaving method affects both the cleaving efficiency and the metrology quality of the resulting etched microstructures. The standard cleaving technique using a diamond scriber does not solve this issue. Herein, we suggest a highly controllable cross-section cleaving method, which minimizes the effect on the resulting deep etching profile. We experimentally compare two cleaving methods based on various auxiliary microstructures: (1) etched transverse auxiliary lines of various widths (from 5 to 100 μm) and positions; and (2) etched dashed auxiliary lines. The interplay between the auxiliary lines and the etching process is analyzed for dense periodic and isolated trenches sized from 2 to 50 μm with an aspect ratio of more than 10. We experimentally showed that an incorrect choice of auxiliary line parameters leads to silicon “build-up” defects at target microstructures intersections, which significantly affects the cross-section profile metrology. Finally, we suggest a highly controllable defect-free cross-section cleaving method utilizing dashed auxiliary lines with the stress concentrators.

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Digital Design as a Key Approach to Shortening MEMS Development Cycle

Cited by 2 publications

References 5 publications

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Deep multilevel wet etching of fused silica glass microstructures in BOE solution

Self-Controlled Cleaving Method for Silicon DRIE Process Cross-Section Characterization

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