Digital-IF WCDMA handset transmitter IC in 0.25-/spl mu/m SiGe BiCMOS

Leung, Vincent; Larson, L.E.; Gudem, Prasad S.

doi:10.1109/jssc.2004.836337

Cited by 35 publications

(2 citation statements)

References 12 publications

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“…Silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology has emerged as a new contender for RF and microwave applications. [1][2][3] The major advantages of a SiGe HBT include its superior microwave power performance, low cost, and compatibility with CMOS technology, which allows high-level integration. It has recently attracted a great deal of attention as a promising solution for future wireless power amplifier (PA) applications.…”

Section: Introductionmentioning

confidence: 99%

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Chiou¹,

Yeh

Lee

et al. 2007

jjap

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The effect of geometry on the RF power performance of silicon–germanium heterojunction bipolar transistor (SiGe HBT) unit cells is investigated using various emitter finger spacing (S). Two unit cells, namely, HBT-1 and HBT-2 with the same emitter area of 8×0.6×10 µm3 but with different S values are thoroughly discussed. The S values of HBT-1 and an HBT-2 are 2 and 5 µm, respectively. The obtained measurements, including DC characteristics and small- and large-signal performance characteristics of high-breakdown SiGe HBT unit cells, are presented. The HBT-1 in class-AB operations at 2.4 GHz achieves an output 1 dB compression point (OP1dB) of 16.0 dBm, a maximum output power of 17.4 dBm, and a peak-power added efficiency (PAE) of 59.1%. Under the same testing conditions, HBT-2 achieves an OP1dB of 19.6 dBm, a maximum output power of 20.6 dBm, and a PAE of 64.5%. HBT-2 yields significant improvements in all power performance parameters compared with HBT-1, such as 3.6 dB in an OP1dB, a maximum output power of 3.2 dB, a PAE of 5.4%, and an improvement in the power performance figure of merit (FOM) of approximately 50%, which is attributed to the fact that HBT-2 has a lower thermal effect than HBT-1. The thermal effect affects both DC and output power characteristics. A 1 W power device fabricated by combining eight HBT-2 unit cells achieves a power gain of 14.5 dB and a maximum PAE (PAEmax) of 75% in a class-AB operation at 2.4 GHz. The power density is calculated to be up to 2.6 mW/µm2. These results demonstrate that SiGe HBT technology has great potential for high-power amplifier applications.

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Section: Introductionmentioning

confidence: 99%

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Chiou¹,

Yeh

Lee

et al. 2007

jjap

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“…Squarelaw power detectors are routinely used in microwave circuits for the purpose of automatic level control (ALC) for instance [10,11]. Such circuits are used to monitor the output power level in wireless radio transceivers [12]. Interestingly though, such detector circuits always require additional components to turn a field effect transistors into a square-law power detector circuit.…”

mentioning

confidence: 99%

Terahertz Imaging Detectors in CMOS Technology

Öjefors

Lisauskas

Glaab

et al. 2009

J Infrared Milli Terahz Waves

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Square-law power detection circuits with on-chip antennas and amplifiers are presented for the detection of 0.65-THz radiation in a low-cost 0.25-μm CMOS technology. The circuit architecture combines metal-insulator-metal (MIM) coupling capacitors with NMOS transistors to facilitate self-mixing in a resistive mixer. A low-frequency (quasi-static) and a high-frequency (non-quasi-static) analysis of the broad-band circuit is presented. Current and voltage readout techniques of nonamplified detectors are compared, and exhibit a measured responsivity of 5.3 mA/W and 150 V/W respectively. A monolithic integrated 3 × 5 pixel focal-plane array has been used for single-pixel and multi-pixel imaging of concealed objects at 0.65 THz.

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Transceiver Architecture Selection – Review, State-Of-The-Art Survey And Case Study

2007

Analog-Baseband Architectures and Circuits for Multistandard and Lowvoltage Wireless Transceivers

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Digital-IF WCDMA handset transmitter IC in 0.25-/spl mu/m SiGe BiCMOS

Cited by 35 publications

References 12 publications

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Terahertz Imaging Detectors in CMOS Technology

Transceiver Architecture Selection – Review, State-Of-The-Art Survey And Case Study

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