Digital Pre-distortion for improving efficiency, linearity and average output power of microwave Point-to-Point power amplifiers used in cellular backhaul telecommunication systems

Branson, Roger; Steinbeiser, Craig; Tran, Kim; Loran, Brian; Wohlert, David

doi:10.1109/mwsym.2012.6258393

Cited by 7 publications

(1 citation statement)

References 1 publication

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“…New technologies, such as LTE systems, allow the possibility to achieve Gigabit capacity through microwave media as well. However, the development of suitable hardware is a major concern to fully exploit such new communication technologies [6]- [10].…”

Section: Introductionmentioning

confidence: 99%

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

Piazzon

Giofrè

Colantonio

et al. 2014

2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

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A GaN-MMIC power module for microwave back-haul applications in C-band frequency range is presented in this contribution. The design is based on a commercial 0.25 μm channel length GaN power process. The module is composed of two stages. The final stage is designed in order to reach 38 dBm of saturated output power with high efficiency and AM/AM linearity. The driver stage is integrated in order to achieve 25 dB of gain and to partially compensate the phase distortion generated by the final stage. The size of the passive matching networks is minimized, allowing to implement the overall circuit in a 3×3mm2 chip area. An uneven drain bias voltage for the two stages is adopted in order to maximize the total efficiency. The module shows 38 dBm of saturated output power, 25 dB of gain, 55% of power added efficiency and less than 1.5 degree of phase distortion at 7 GHz

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Section: Introductionmentioning

confidence: 99%

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

Piazzon

Giofrè

Colantonio

et al. 2014

2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC)

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A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology

Campbell¹,

Tran²,

Kao³

et al. 2012

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers

Quaglia

Jiang

Camarchia

2014

2014 44th European Microwave Conference

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Digital Pre-distortion for improving efficiency, linearity and average output power of microwave Point-to-Point power amplifiers used in cellular backhaul telecommunication systems

Cited by 7 publications

References 1 publication

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology

Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers

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Digital Pre-distortion for improving efficiency, linearity and average output power of microwave Point-to-Point power amplifiers used in cellular backhaul telecommunication systems

Cited by 7 publications

References 1 publication

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

An efficient, linear and compact GaN-MMIC power module for microwave backhaul links

A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15&#181;m GaN on SiC HEMT Technology

Frequency extension of system level characterization and predistortion setup for on-wafer microwave power amplifiers

Contact Info

Product

Resources

About

A K-Band 5W Doherty Amplifier MMIC Utilizing 0.15µm GaN on SiC HEMT Technology