Dilute Magnetic III-N Semiconductors Based on Rare Earth Doping

Abstract

This paper focuses on the magnetic properties of wide bandgap III-N semiconductors doped with rare earth elements. Such materials form a novel class of dilute magnetic semiconductors that have an important potential impact on future information processing devices. In particular, rare earth doped III-N thin films may lead to integration of electronic, optical, and magnetic functionality for computation, sensing, and communication applications. The main aspects of this paper concern the efficient incorporation of rare earth ions in III-N thin films and the demonstration of magnetic effects at room temperature. While early studies were based on ion implantation and solid-state diffusion, major advances have been achieved through molecular beam epitaxy and metal-organic chemical vapor deposition. Measurements of room temperature magnetic effects from III-N films doped with rare earth elements, including erbium, gadolinium, europium, neodymium, and thulium, are presented. The dependence of measured magnetic properties on the synthesis method, co-doping, and material defects are addressed.

Emerging ferroelectric materials ScAlN: applications and prospects in memristors

“…These surface state electrons and holes can affect the surface properties and photoelectric properties of AlN. 4 Apart from the photoelectric effect, other processes including heat stimulation and chemical reactions can also produce electrons and holes.…”

“…Nitrides are more durable and structurally stable than oxides, making nitride devices more trustworthy in difficult operating situations over the long run. 4,[68][69][70] Secondly, the ferroelectric properties of ScAlN are unique compared with traditional ferroelectric materials. The ferroelectric phase transition temperature of ScAlN can be above room temperature, which means that it can exhibit ferroelectricity at room temperature.…”

“…These surface state electrons and holes can affect the surface properties and photoelectric properties of AlN. 4…”

“…Nitrides are more durable and structurally stable than oxides, making nitride devices more trustworthy in difficult operating situations over the long run. 4,68–70…”

Vibrational Spectrum and Thermal Conductivity of Rare‐Earth Semiconducting Erbium Nitride Thin Films

“…[ 4,5 ] The inclusion of rare‐earth elements in nonmagnetic semiconductors can also add spin degrees of freedom that lead to their dilute magnetic semiconducting properties for spin‐based information processing. [ 6,7 ] Erbium nitride (ErN) is one of the most promising REN and is intensely studied to harness its riveting properties in device applications. ErN is ferromagnetic below a Curie temperature of 6 K and exhibits a lattice constant of 4.85 Å.…”