Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties

Prete, P.; Lovergine, N.

doi:10.1016/j.pcrysgrow.2020.100510

Cited by 23 publications

(13 citation statements)

References 83 publications

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“…Dilute nitride materials such as GaAsN, GaPN, GaAsPN, and InGaNAs can be stabilized in the form of NWs via self-catalytic or Au-assisted vapor–liquid–solid (VLS) growth mechanisms using plasma-assisted molecular beam epitaxy (PA-MBE) or gas-source MBE techniques. − While Au-catalyzed InAs NWs can exhibit excellent phase purity, self-induced NW formation is preferred since foreign catalyst atoms can incorporate into the growing material and act as effective nonradiative recombination centers, thereby limiting the performance of NW-based devices …”

Section: Introductionmentioning

confidence: 99%

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Kaveev,

Fedorov,

Pavlov

et al. 2024

ACS Appl. Nano Mater.

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Epitaxial InAs-based nanowire (NW) arrays have recently gained attention as promising materials for infrared optoelectronics. To shift the spectral sensitivity of NW-based photodetectors, we for the first time investigated dilute nitride InAsN nanowires on Si(111). The growth of InAsN nanowires with a wurtzite phase was achieved through a self-induced mechanism using plasma-assisted molecular beam epitaxy. Two growth strategies were employed to synthesize InAsN and InAs/InAsN core−shell nanowires, allowing for independent control over the morphology and optical properties. According to the photoluminescence measurement and performed ab initio calculations for the wurtzite InAsN structure, we estimate the atomic concentration of the incorporated nitrogen in the studied structure as 0.5−0.7%. Transmission electron microscopy and X-ray diffraction reveal a wurtzite crystal lattice volume shrinkage with an increase in nitrogen content. Our results demonstrate the potential of dilute nitride InAsN for strain and band gap engineering in NW photodetectors on Si.

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Section: Introductionmentioning

confidence: 99%

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Kaveev,

Fedorov,

Pavlov

et al. 2024

ACS Appl. Nano Mater.

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“…[1][2][3] Nano-and microstructured semiconductors are widely used in modern laser technologies, solar cells, as sensors and supercapacitor plates. [4][5][6][7][8][9] An important technological task is to simplify and reduce the cost of synthesis technologies. In this regard, methods for electrochemical structuring of the surface are being actively developed.…”

Section: Introductionmentioning

confidence: 99%

Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition

Suchikova

Ковачов

Bohdanov

2022

Nanomaterials and Nanotechnology

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We demonstrate how the formation of octahedral microcrystals of arsenic oxide As2O3 in the form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical etching method with simultaneous deposition on the surface of substrates with n-GaAs (111). Crystallites were formed on a previously synthesized porous layer of GaAs. To explain the behavior of formation on the surface of the monocrystalline GaAs porous layer and As2O3 crystallites in the electrochemical reaction, we propose a qualitative model based on the decomposition of binary semiconductors in contact with electrolytes. Under this model, the crystallization of precipitated oxides occurs as a result of the transfer of ions to the crystal surface as a result of the electrolysis process. The formation of the composite structure takes place on the surface of the semiconductor and is characterized by the minimization of elastic energy. XRD analysis showed the formation of a complex compound of As2O3 and As0.172Sb0.570O1.113. The appearance of antimony is explained in terms of the formation of new centers when the As atom is replaced by an Sb doping atom in the crystal. Directed controlled oxidation technologies make it possible to synthesize a reliable passivating layer consisting of one type of oxide, namely As2O3 in the cubic phase of arsenolite. In addition, such structures can be used in photonics devices and as photocatalysts.

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“…Despite the breath of different nanowire heterostructures proposed for solar cells, − to date direct experimental estimates of absorption enhancement remain mostly limited to single or dense arrays of compositionally uniform nanowires. In this paper, we study the optical properties of free-standing GaAs/Al 0.33 Ga 0.67 As core–shell nanowire arrays of different densities by means of highly resolved room-temperature photoreflectance (PR) measurements.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells

Cretı̀

Prete

Lovergine

et al. 2022

ACS Appl. Nano Mater.

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Dense arrays of core−shell nanowires possess great potential as superabsorptive media for the fabrication of efficient solar cells. We report on GaAs near-band-edge absorption properties of free-standing GaAs− AlGaAs core−shell nanowires having different shell thicknesses, by detailed line-shape analyses of room-temperature photoreflectance (PR) spectra, employing first-derivative Gaussian and Lorentzian models of the GaAs complex dielectric function. Line-shape analyses of the nanowire PR spectra returned a doublet of resonance lines at energies between 1.410 and 1.422 eV, ascribed to strain-split heavy-and light-hole exciton absorption transitions in the GaAs nanowire cores. The optical oscillator strengths of exciton resonances evaluated by Lorentzian analyses of PR features showed a significant enhancement (up to 30×) of GaAs band-edge optical absorption in nanowires with respect to the reference planar structure. Additionally, values of integrated Lorentzian moduli were normalized to the total GaAs core volume fill fraction (estimated in the range 0.5−7.0% with respect to a planar layer of the same height) within each nanowire ensemble, achieving a first ever experimental estimate of the GaAs near band-edge absorption enhancement factor for GaAs−AlGaAs core−shell nanowires in the range 22−190, depending on the nanowire inner core−shell structure. Such strong absorption enhancement is ascribed to improved wave-guiding of incident light into the GaAs cores by the surrounding AlGaAs shell (its average thickness being estimated between ∼14 and 100 nm in the present nanostructures).

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Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties

Cited by 23 publications

References 83 publications

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition

Enhanced Optical Absorption of GaAs Near-Band-Edge Transitions in GaAs/AlGaAs Core–Shell Nanowires: Implications for Nanowire Solar Cells

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