Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert, J.; Scalbert, D.

doi:10.1007/978-3-319-65436-2_14

Cited by 6 publications

(3 citation statements)

References 186 publications

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“…This interaction of the antiferromagnetic (AFM) type inside of the nearest neighboring pairs of LSMs may exceed the effect of the carrier-induced exchange field, and thermal energy (as it was mentioned earlier, is expressed in energy units) and establishes their total zero spin moments. As a result, such nearest neighboring LSMs are omitted that appears as the effective LSM density ′ < [21]. Introducing the phenomenological parameter ′ improves the matching of experimental data and calculations for the spin splitting of exciton spectra.…”

Section: Rkky Modeling Of the Phase Transitionmentioning

confidence: 99%

Molecular-Field Approximation in the Theory of Ferromagnetic Phase Transition in Diluted Magnetic Semiconductors

Semenov¹,

Ryabchenko²

2021

Ukr. J. Phys.

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In this pedagogical paper, the comparative analysis of two common approaches describing the ferromagnetic phase transition in diluted magnetic semiconductors (DMS) is expounded in terms of the Weiss field approximation. Assuming a finite spin polarization of the magnetic ions, the treatment of carrier-ion exchange interaction in the first order evokes a homogeneous Weiss molecular field that polarizes the spins of free carriers. In turn, this spin polarization of the free carriers exerts the effective field that may stabilize the DMS spin polarization belowa critical temperature TC. The treatment of such self-consistent spontaneous DMS magnetization can be done in terms of the spin-spin interaction independent of the inter-ion distance and the infinitesimal in thermodynamic limit. On the other hand, by additionally accounting for the second-order effects of the carrier-ion exchange interaction, we can treat a Weiss field in terms of the Ruderman–Kittel–Kasuya–Yosida indirect spin-spin interaction, which oscillates and does not disappear at finite inter-ion distances in the case of a finite concentration of carriers. These both approaches result in the same Curie temperature TC provided a non-correlated homogeneous random distribution of the localized spin moments over the sample volume. We discuss the origin of such coincidence and show when this is not a case in other more realistic models of the conducting DMSs.

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Section: Rkky Modeling Of the Phase Transitionmentioning

confidence: 99%

Molecular-Field Approximation in the Theory of Ferromagnetic Phase Transition in Diluted Magnetic Semiconductors

Semenov¹,

Ryabchenko²

2021

Ukr. J. Phys.

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“…The doping of semiconductors with small concentrations of transition metals (TM) ions, such as Co 2+ , Cr 3+ , Fe 3+ , Mn 2+ , allows the formation of new types of materials that have interesting spin-dependent electrical, optical, magnetic, and structural properties [1][2][3]. These new properties are attributed to the sp-d exchange interactions that involve the d-sub-levels of transition metal (TM) ions and the sp-electrons of the conduction band and/or holes in the host semiconductor valence band [4,5]. These materials are called diluted magnetic semiconductors (DMS) and present great possibilities for technological applications such as the production of light-emitting diodes (LEDs) [6], spin transistors [7], lasers [8], supercapacitor [9], among others.…”

Section: Introductionmentioning

confidence: 99%

Diluted Magnetic Semiconductors Nanocrystals: Saturation and Modulation

Silva¹,

Barbosa²,

Silva³

et al. 2021

Nanocrystals [Working Title]

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Diluted Magnetic Semiconductor (DMS) nanocrystals are a new class of materials formed by doping the semiconductor with transition metals (TM), which gives interesting magneto-optical properties. These properties are attributed to the exchange interaction between the pure semiconductor’s sp-electrons and the localized TM d-electrons. This book chapter shows exciting results of new DMS developed by the group, both in powder form and embedded in glassy systems. Depending on the concentration of doping ions, saturation of the incorporation of substitutional and interstitial sites in the nanocrystal structure may occur, forming other nanocrystals. In this context, we investigated the doping saturation limit in nanopowders of DMS Zn1-xMnxO NCs and Zn1-xMnxTe, Zn0.99-xMn0.01CoxTe, and Bi2-xCoxS NCs synthesized in glassy matrices. Thus, the sites’ saturation into the crystalline lattice of nanocrystals is a topic little reported in the literature, and we will comment on this work. Therefore, we will show results from the group about the modulation and saturation in diluted magnetic semiconductors nanocrystals in this work.

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“…Diluted Magnetic Semiconductors (DMS) are an interesting class of materials, obtained by adding a small concentration of magnetic dopants in a semiconductor (e.g., Ga(Mn)As) [1]. These materials have many potential applications in the field of spintronics, including devices with high speed and low power consumption [2], magneto-optical devices [3], and semiconductor based spin valves [4,5].…”

Section: Introductionmentioning

confidence: 99%

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

et al. 2020

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The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

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Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cited by 6 publications

References 186 publications

Molecular-Field Approximation in the Theory of Ferromagnetic Phase Transition in Diluted Magnetic Semiconductors

Molecular-Field Approximation in the Theory of Ferromagnetic Phase Transition in Diluted Magnetic Semiconductors

Diluted Magnetic Semiconductors Nanocrystals: Saturation and Modulation

Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

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