Dimensionless figure of merit of constantan estimated using impedance spectroscopy

Abstract

Commercialized bulk constantan with a low dimensionless figure of merit and its film fabricated by electroplating were prepared to demonstrate the feasibility of impedance spectroscopy for estimating thermoelectric parameters. From the frequency dependence of the impedance, the resistivity and dimensionless figure of merit were directly estimated as 5.3 × 10−7 Ωm and 0.026 for the bulk and 3.8 × 10−7 Ωm and 0.0098 for the film at room temperature (302 K), respectively. We concluded that impedance spectroscopy is a suitable technique for estimating the thermoelectric parameters of any material with an apparent Seebeck coefficient.

Reverse heat flow with Peltier-induced thermoinductive effect

“…The dip structure is not measured in the two-probe measurement as l v /l = 1. This is consistent with the absence of the dip structure in reports of electrical impedance measurement with the two-probe configuration, such as a zT estimation using an impedance spectroscopy technique [27][28][29] . Our exact solution revealed that the size of the reverse heat flow varied depending on x, and that it could be detected through electrical impedance measurements with changing l v .…”

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

“…[21][22][23][24] Although thickness scaling showed degradation in the thin region, the ferroelectricity is kept for a thickness less than 10 nm. [25][26][27] Furthermore, ferroelectric AlScN films with the room-temperature process are attractive for embedded CiM applications. 28) Although many works are focused on composition or thickness-dependent ferroelectric properties, there are few works on endurance, including field cycling change and dielectric breakdown.…”

Influence of contact resistance and heat leakage in the determination of the dimensionless figure of merit via duo-impedance spectroscopy

“…In this study, we qualitatively estimated zT using a system based on a polycrystalline bulk bismuth as a fundamental thermoelectric element in the temperature range of 300-30 K, incorporating the influence of R c and Q leak . Based on the temperature dependence ascertained through the IS and duo-IS methods that enable the measurement of low zT in a constantan material (zT ∼ 0.01, at room temperature), 15) we discuss the approach to reduce the error in the estimation of zT from the measurement results.…”