2009
DOI: 10.1063/1.3224908
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Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells

Abstract: Solar cells in modules are reverse biased when they are shaded. This can lead to diode breakdown and eventually to the occurrence of hot spots, which may, in the extreme case, destroy the module by thermal degradation. We observed at least three different types of diode breakdown in multicrystalline silicon solar cells. One of them is found to be related to the recombination activity of defects. This type is indicated by a slow increase in the reverse current with reverse bias and a relatively low breakdown vo… Show more

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Cited by 58 publications
(45 citation statements)
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“…The general correlation between DLIT and EL is very good, except for the images taken at À8 V. In the following, we will call all breakdown sites occurring (for our typical samples) below À9 V "early breakdown" or "type-1" breakdown sites. 21 This breakdown type is often found in edge regions and partly also in the cell area. There is no visible correlation to the forward-bias EL image (g).…”
Section: General Breakdown Behaviormentioning
confidence: 99%
“…The general correlation between DLIT and EL is very good, except for the images taken at À8 V. In the following, we will call all breakdown sites occurring (for our typical samples) below À9 V "early breakdown" or "type-1" breakdown sites. 21 This breakdown type is often found in edge regions and partly also in the cell area. There is no visible correlation to the forward-bias EL image (g).…”
Section: General Breakdown Behaviormentioning
confidence: 99%
“…It is seen that at small bias only a few breakdown sites can be revealed as bright spots (shown with white arrows). Typical breakdown sites revealed at small bias (socalled type 1 breakdown [6,11,14]) are shown in Figures 2(b) and 2(c) as two bright spots with brightness increasing with reverse bias. In Figure 2(c) obtained at 19 V reverse bias, some additional bright points appear (line of bright points between two bright defects).…”
Section: Resultsmentioning
confidence: 99%
“…Based on the above discussion and according to the investigation methods of some other research groups, the breakdown sites are qualitatively cut out by laser for investigation on type II breakdown mechanism. [11][12][13] The voltage in I-V characteristics is measured by using Keithley sourcemeter. There are no other resistor units in the circuit.…”
Section: à3mentioning
confidence: 99%