Diode laser bars deliver &gt; 400-W peak CW power from 800-nm to 980-nm enabling wide range of applications

Crump, P.; Patterson, Steve; Wang, Jun; Dong, Weimin; Grimshaw, Mike; Zhang, Shiguo; Elim, Sandrio; Bougher, Mike; Patterson, Jason; Das, Samaresh; Wise, Damian; DeFranza, Mark; Bell, Jake; Farmer, Jason; Vito, Mark De; Martinsen, R.

doi:10.1117/12.689842

Cited by 7 publications

(2 citation statements)

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“…Similar designs were also found to perform well at 1900-nm, also as shown in Figure 10 for the same device configuration: 1.8-W total output power and 25% efficiency were obtained in uncoated 100-µm stripe, 1-mm cavity devices at 25-°C. We have also extended our material as far as 2100-nm, with high power delivering 25-W per bar and 19% power conversion efficiency at this wavelength [18]. …”

Section: Extending Conventional Quantum Well Devices To Longer Wavelementioning

confidence: 99%

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

et al. 2007

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Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635-nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gaps from 1100 to 1280-nm, and above 1500-nm. There are many important medical and sensing applications in the 12xx-nm range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths > 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths > 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.

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Section: Extending Conventional Quantum Well Devices To Longer Wavelementioning

confidence: 99%

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

et al. 2007

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“…Diode efficiency reflects an industry consensus on pumps for LIFE, [6], as well as literature reports for diode lasers operating at 808 and 940~970 nm wavelengths, [e.g. ; [16][17][18] with reported efficiencies >70% from 850 through 980 nm.…”

Section: Appendix: Design and Simulation Basis For Table Imentioning

confidence: 99%

Efficiency of the LIFE Laser - Response to a Request for Information from the National Research Council

Deri¹,

Erlandson²,

Bayramian³

2011

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System models indicate that the required driver efficiency for inertial fusion energy (IFE) should exceed approximately 12-to-14%, and that further efficiency improvements provide diminishing returns on overall system performance.[1] Notably, these studies show that an optimized system will likely employ drivers with suboptimal efficiency from a purely technical standpoint, due to cost vs. efficiency tradeoffs. For this reason, the LIFE laser point design is optimized for the system (power plant) applications, rather than driver efficiency alone. This document describes the anticipated efficiency of the LIFE laser driver, and the basis for this assessment.

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Impact of Heat Spreaders on Thermal Performance of III-N-Based Laser Diode

Kuc

Wasiak

Sarzaa

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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This paper explores the effect on optical output power of modifications to the package assembly of a blue-violet III-N-based p-down edge-emitting ridge-waveguide laser diode grown on bulk GaN crystal. The calculations were carried out using a 3-D self-consistent finite-element model. We focus on thermal analyses of the size and thermal conductivity of the heat spreader (mainly made of natural diamond and chemical vapor deposition diamond) and on the thickness of the solder. The results open the possibility for multiple increases in output power, due to a considerable increase in the power conversion efficiency of the laser diode.Index Terms-Computer aided analysis, semiconductor device packaging, semiconductor lasers.

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Diode laser bars deliver > 400-W peak CW power from 800-nm to 980-nm enabling wide range of applications

Cited by 7 publications

References 0 publications

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Extending the wavelength range of single-emitter diode lasers for medical and sensing applications: 12xx-nm quantum dots, 2000-nm wells, > 5000-nm cascade lasers

Efficiency of the LIFE Laser - Response to a Request for Information from the National Research Council

Impact of Heat Spreaders on Thermal Performance of III-N-Based Laser Diode

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