1968
DOI: 10.1109/tmtt.1968.1126592
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Diode SPDT Switching at High Power with Octave Microwave Bandwidth

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Cited by 8 publications
(6 citation statements)
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“…It consists of nonmagnetic components, allowing it to be placed inside the scanner bore in close proximity to the RF antenna. The strategic placement of the λ/4 stubs routes the RF signal from the transmitter directly to the RF coil/antenna without directly passing through any lossy electronic components such as PIN diodes . This enables the use of high average powers in comparison to other Tx/Rx switches designed for MRI applications .…”
Section: Discussionmentioning
confidence: 99%
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“…It consists of nonmagnetic components, allowing it to be placed inside the scanner bore in close proximity to the RF antenna. The strategic placement of the λ/4 stubs routes the RF signal from the transmitter directly to the RF coil/antenna without directly passing through any lossy electronic components such as PIN diodes . This enables the use of high average powers in comparison to other Tx/Rx switches designed for MRI applications .…”
Section: Discussionmentioning
confidence: 99%
“…Using microstrips instead of semirigid cables could be another approach to reduce the current size of the high‐power Tx/Rx switch, which could increase transmission losses of the circuit …”
Section: Discussionmentioning
confidence: 99%
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