Diode turn-on time induced failures in switching regulators

Williams, Jim; Beebe, David

doi:10.1016/b978-0-12-385185-7.00011-1

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…to ensure The question is what is the value of time . Regarding the switching time of the diodes used in the DC/DC converters, there is a detailed study [19] showing that for the different types it ranges from 2 to 15 nS. In this case, however, it is about the reverse diode of MOSFET, which is actu ally a parasitic transistor in the structure.…”

Section: Theoretical Conclusionmentioning

confidence: 99%

Dead time influence on operating modes of transistor resonant inverter with pulse frequency modulation (PFM)

Antchev¹,

Antchev²

2019

IJPEDS

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<p>This study explores the impact of dead-time on the transistor resonant inverter operating modes depending on the ratio of the transistor switching frequency and the resonant frequency of the series-resonance circuit in the diagonal of the transistor bridge. On the basis of theoretical data and experimental results, a dead-time limitation relation has been offered - besides for a minimum value but for a maximum value. This provides extension of the operating mode range in zero voltage switching (ZVS).</p>

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Section: Theoretical Conclusionmentioning

confidence: 99%

Dead time influence on operating modes of transistor resonant inverter with pulse frequency modulation (PFM)

Antchev¹,

Antchev²

2019

IJPEDS

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“…Many research papers have developed models aiming at predicting oscillations frequencies and amplitudes, either at turn-off [1]- [4] or turn-on [5], [6]. These studies usually model switching loops with laddered linear RLC circuits and current-or voltage-sources.…”

Section: A Introductionmentioning

confidence: 99%

Study of the Impedance of the Bypassing Network of a Switching Cell – Influence of the Positioning of the Decoupling Capacitors

Pascal

Labrousse

Petit

et al. 2019

2019 IEEE International Workshop on Integrated Power Packaging (IWIPP)

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Mechanisms responsible for ringing and oscillations in power converters at transistors turn-offs are, first, studied using small signal modelling. It is explained why a 50 % derating must be applied to high-speed transistors. Experimental measurements validate the analytical predictions. The influence of the distance between a switching cell and its decoupling capacitors is then studied; it appears that using a low-inductancethough simplelayout results in a stray inductance as low as 11 nH when the capacitor is 30 cm away from the switching cell, enabling degrees of freedom for thermal management.

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Diode turn-on time induced failures in switching regulators

Cited by 2 publications

References 11 publications

Dead time influence on operating modes of transistor resonant inverter with pulse frequency modulation (PFM)

Dead time influence on operating modes of transistor resonant inverter with pulse frequency modulation (PFM)

Study of the Impedance of the Bypassing Network of a Switching Cell – Influence of the Positioning of the Decoupling Capacitors

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