Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

Jany, R.; Breitschaft, Martin; Hammerl, G.; Horsche, A.; Richter, Christoph; Paetel, Stefan; Mannhart, J.; Stucki, Nicolas; Reyren, Nicolas; Gariglio, Stefano; Zubko, Pavlo; Caviglia, Andrea D.; Triscone, Jean‐Marc

doi:10.1063/1.3428433

Cited by 25 publications

(29 citation statements)

References 9 publications

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“…3(a), the highly resistive initial resistance state (IRS) of the Pt/LAO/STO heterojunction exhibits significant rectification at room temperature in a voltage sweep from À4 to þ4 V, indicating that the LAO layer retains its expected insulating characteristics. The rectifying behavior is similar to a recent report on a diode based on the LAO/STO interface with Au electrodes [40]. However, in our devices, this pristine state can be transformed into a switchable state using a simple reverse voltage sweep to À4 V. In the regime of negative bias, notable current fluctuations are observed that prelude the stable RS operations with bipolar switching I-V loops.…”

Section: Resultssupporting

confidence: 89%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt=LaAlO 3 =SrTiO 3 heterostructures, where the conducting layer near the LaAlO 3 =SrTiO 3 interface serves as the ''unconventional'' bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO 3 =SrTiO 3 interface and the creation of defect-induced gap states within the ultrathin LaAlO 3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.

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Section: Resultssupporting

confidence: 89%

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Luo

Turner

et al. 2013

Phys. Rev. X

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“…6 Furthermore, this electric-field controlled interfacial metal-insulator ͑MI͒ transition can also be realized at nanometer scales by means of a conducting atomic force microscopy ͑CAFM͒ probe. 7 These findings show application potentials in oxide electronic devices, 8,9 however, their underlying mechanisms are also not clarified unambiguously. In this letter, besides the electric-field controlled interfacial MI transition at d =3 uc in air, a reproducible resistance switching of the interfacial conductance is observed for d Ն 3 uc samples in a vacuum environment, which is proposed to originate from the modulation of oxygen ion transfer in STO by external electric field near the interface.…”

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confidence: 99%

“…[2][3][4][5][6][7][8][9] However, no consensus on its origin has been achieved. 3 The polar catastrophe induced electronic reconstruction, 1,2 the oxygen vacancies dominated conduction, 4 or the extrinsic doping by La-interdiffusion at interface, 5 all can explain the conducting behavior.…”

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confidence: 99%

Resistance switching at the interface of LaAlO3/SrTiO3

Chen

Zhao

Sun

et al. 2010

Applied Physics Letters

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At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer.

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“…The electron density at the interface can be controlled using a number of techniques including back-gating 22 , top-gating 23 , polar adsorbates 24 or via nanoscale control using conductive atomic force microscopy (AFM) lithography 25 .…”

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confidence: 99%

Room-temperature electronically-controlled ferromagnetism at the LaAlO3/SrTiO3 interface

et al. 2014

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Reports of emergent conductivity, superconductivity and magnetism have helped to fuel intense interest in the rich physics and technological potential of complex-oxide interfaces. Here we employ magnetic force microscopy to search for room-temperature magnetism in the well-studied LaAlO 3 /SrTiO 3 system. Using electrical top gating to control the electron density at the oxide interface, we directly observe the emergence of an in-plane ferromagnetic phase as electrons are depleted from the interface. Itinerant electrons that are reintroduced into the interface align antiferromagnetically with the magnetization at first screening and then destabilizing it as the conductive regime is approached. Repeated cycling of the gate voltage results in new, uncorrelated magnetic patterns. This newfound control over emergent magnetism at the interface between two non-magnetic oxides portends a number of important technological applications.

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Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO3–SrTiO3 interfaces

Cited by 25 publications

References 9 publications

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

Resistance switching at the interface of LaAlO3/SrTiO3

Room-temperature electronically-controlled ferromagnetism at the LaAlO3/SrTiO3 interface

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